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The Energy-Driven Hot-Carrier Degradation Modes of nMOSFETs.

Authors :
Guerin, C.
Huard, V.
Bravaix, A.
Source :
IEEE Transactions on Device & Materials Reliability; Jun2007, Vol. 7 Issue 2, p225-235, 11p
Publication Year :
2007

Abstract

In this paper, we confirm that the energy is the driving force of hot-carrier effects. In high-energy long-channel case, the energy-driven paradigm allows to retrieve lucky electron model-like equations although the explanations are different. When the energy is lowered, high-energy electrons generated by electron-electron scattering become the dominant contribution to the degradation. Finally, for even lower energy, multiple vibrational excitation mechanism starts taking the lead. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
15304388
Volume :
7
Issue :
2
Database :
Complementary Index
Journal :
IEEE Transactions on Device & Materials Reliability
Publication Type :
Academic Journal
Accession number :
52148330
Full Text :
https://doi.org/10.1109/TDMR.2007.901180