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ABSTRACT This article presents a new quadrature voltage-controlled oscillator (QVCO). The LC-tank QVCO consists of two first-harmonic injection-locked oscillators (ILOs). The outputs of one ILO are injected to the common nodes of capacitors on the other ILO and vice versa so as to force the two ILOs operate in quadrature. At the supply voltage of 1.1 V, the total power consumption is 5.94 mW. The free-running frequency tuning range is 11.5%, tunable from 6.56 to 7.36 GHz as the tuning voltage is varied from 0.0 to 2 V. The QVCO has been implemented with the TSMC 0.18-μm CMOS technology and the die area is 0.504 × 0.803 mm2. The measured phase noise at 1-MHz offset is −123.01 dBc/Hz at the oscillation frequency of 7.34 GHz and the figure of merit of the proposed QVCO is about −192.5 dBc/Hz. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2528-2531, 2013 [ABSTRACT FROM AUTHOR]

This article presents a fully integrated quadrature cross-coupled voltage controlled oscillator (QVCO) using common-drain transistor instead of common-source transistor as a coupling device.The prototype 3.8 GHz QVCO in 0.18 μm CMOS process is proposed to generate four output phases and it uses two p-core cross-coupled VCOs and nMOS coupling devices. The proposed QVCO oscillates from 3.6 to 3.84 GHz and the power consumption is 7.24 mW at 0.74 V supply voltage. The measured phase noise is -126.19 dBc/Hz at 1 MHz offset frequency from the carrier frequency 3.745 GHz. The VCO occupies a chip area of 1.08 ×0.924 mm2 and provides a figure of merit of -189.05 dBc/Hz. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1262-1266, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27578 [ABSTRACT FROM AUTHOR]

A new CMOS quadrature voltage-controlled oscillator (QVCO) is proposed. The LC-tank QVCO consists of two balanced complementary Colpitts VCOs with differential outputs. The tail inductor output of the first balanced VCO is injected to the gate of the tail transistor in the second balanced VCO and vice versa to ensure the two balanced VCOs operate in quadrature. At the supply voltage of 1.2 V, the total power consumption is 4.32 mW. The free-running frequency tuning range is 13.4%, tunable from 5.92 to 6.77 GHz as the tuning voltage is varied from 0 to 2 V. The QVCO has been implemented with the TSMC 0.18 μm CMOS technology and the die area is 0.843 × 1.024 mm2. The measured phase noise at 1 MHz offset is −121.67 dBc/Hz at the oscillation frequency of 6.74 GHz and the figure of merit of the proposed QVCO is about −191.89 dBc/Hz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:700-703, 2013; View this article online at wileyonlinelibrary.com. DOI: 10.1002/mop.27433 [ABSTRACT FROM AUTHOR]

A low-phase noise triple-band voltage-controlled oscillator (VCO) is proposed and it consists of a triple-resonance LC resonator and a cross-coupled switching transistor pair. In the proposed VCO that uses the triple-resonance LC-resonator, band switching is achieved by tuning the varactors in the resonator without using lossy switches in the resonator path. The triple-resonance LC resonator comprises a parallel-tuned LC resonator and two series resonant resonators. The proposed VCO has been implemented with the TSMC 0.18 μm 1P6M CMOS technology and the core power consumption is 3.12 mW at the dc drain-source bias of 0.8 V. The VCO can generate differential signals in the frequency range of 6.651∼7.146 GHz, 5.607∼5.941 GHz, and 3.15 GHz∼3.483 GHz. The die area of the triple-band VCO is 0.684 × 0.754 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:737-740, 2013; View this article online at wileyonlinelibrary.com. DOI: 10.1002/mop.27431 [ABSTRACT FROM AUTHOR]

This article proposes a high-performance CMOS voltage-controlled oscillator (VCO) implemented with composite right-/left-handed nonmobius-connected LC-rings to provide dual-band differential outputs.The VCO consists of two cross-coupled sub-VCOs sharing series-LC resonators. nMOSFET switches are used to control high- and low-band outputs. The proposed VCO has been implemented with the TSMC 0.18 μm SiGe BiCMOS technology. The die area of the VCO is 1.16 × 1.12 mm2. With the switch on, the odd-mode VCO operates at the high-frequency 6 GHz band, and when the switch is off, the even-mode VCO operates at the low-frequency 4 GHz band. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:468-471, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27375 [ABSTRACT FROM AUTHOR]

A dual-band cross-coupled oscillator is proposed to operate at 5 and 9 GHz. The oscillator consists of two cross-coupled BiCMOS oscillators with shared series-tuned LC-tank. In the even-mode, the series-tuned LC-tank takes no part in affecting the oscillation frequency, whereas in the odd-mode, the series-tuned LC-tank plays the role in the oscillation frequency. The proposed oscillator has been implemented with the TSMC 0.18 μm SiGe BiCMOS technology and the core power consumption is 2.6 mW at the supply voltage of 0.7 V. The figure of merit is −192/−190 dBc/Hz at high-/low-band. The die area of the dual-band VCO is 1.04 × 0.755 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:485-488, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27368 [ABSTRACT FROM AUTHOR]

On-chip high-frequency frequency sources suffer from quality (Q)-factor degradation of varactors.Injection-locked frequency multipliers allow the design of oscillators running at a frequency lower than required to take the advantage of higher Q-factor varactor. This article proposes a fully integrated CMOS LC-tank injection-locked frequency quadrupler fabricated in the TSMC 90 nm RF-CMOS process and describes the circuit design, operation principle, and measurement results of the quadrupler. The injection-locked frequency quadrupler comprises a first-harmonic injection-locked oscillator with dual-injection ports, two frequency doublers and a transformer balun. At the supply voltage of 0.7 V, the dc power consumption is 9.1 mW. At the incident power of 0 dBm, the injection-locked frequency quadrupler can provide an output signal with the frequency from 24 to 29.6 GHz, while the frequency of the injection signal varies from 6 to 7.4 GHz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:266-269, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27291 [ABSTRACT FROM AUTHOR]

This article presents a new fully-integrated quadrature voltage-controlled oscillator (QVCO), which consists of two differential VCOs coupled via an inductor-ring. The proposed CMOS QVCO has been implemented with the TSMC 0.18-μm CMOS technology and the die area is 0.693 × 0.976 mm2. At the supply voltage of 0.7 V, the total power consumption is 2.58 mW. The free-running frequency of the QVCO is tunable from 5.15 to 5.55 GHz as the tuning voltage is varied from 0 to 0.7 V. The measured phase noise at 1 MHz frequency offset is −120.88 dBc/Hz at the oscillation frequency of 5.28 GHz and the figure of merit of the proposed QVCO is −191.21 dBc/Hz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:310-313, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27283 [ABSTRACT FROM AUTHOR]

A dual-resonance balanced voltage-controlled oscillator (VCO) is proposed to serves as a dual-band oscillator operated at 3.5 and 8.5 GHz. The VCO consists of two single-ended dual-resonance LC-tank complementary Colpitts oscillators configured in a balanced topology. The proposed VCO has been implemented with the TSMC 0.18 μm 1P6M CMOS technology and the core power consumption is 4.21 mW at the supply voltage of 1.2 V. The figure of merit is −190.22/−190.3 dBc/Hz at high/low band. The die area of the dual-band VCO is 0.995 × 0.55 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:194-197, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27234 [ABSTRACT FROM AUTHOR]

A low power wide locking range divide-by-4 injection-locked frequency divider (ILFD) is proposed in the letter and was implemented in the TSMC 0.18 μm SiGe BiCMOS process. The divide-by-4 ILFD uses a cross-coupled voltage-controlled oscillator with an active inductor and a three-transistor composite consisted of two nMOSFETs and one pMOSFET to serve as an injection device with the function of linear and nonlinear mixers. At the supply voltage of 1.5 V and at the incident power of 0 dBm, the operation range of the divide-by-4 is 2.3 GHz, from the incident frequency 14.5 to 16.8 GHz, the percentage is 14.7%. The locking range of the divide-by-4 is 1.7 GHz, from the incident frequency from 14.6 to 16.3 GHz, the percentage is 11%. The core power consumption is 1.5 mW. The die area is 0.465 × 0.317 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2825-2828, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27204 [ABSTRACT FROM AUTHOR]

This letter develops a phase noise formula for injection-locked frequency dividers (ILFDs) implemented with dual-resonance LC tank, which consists of a series LC resonator and a parallel LC resonator. In parallel-tuned single-resonance ILFD, the output phase noise is set by the noise of the injection signal at low frequency offset from the carrier, while it can be dominated by the divider noise at large frequency offset. The developed theory shows that the phase noise equations of a series-tuned single-resonance ILFD and dual-resonance ILFDs has a common phase noise equation as the one used for a single-resonance parallel-tuned ILFD. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2491-2494, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27105 [ABSTRACT FROM AUTHOR]

A low phase noise dual-band voltage-controlled oscillator (VCO) is proposed to achieve large voltage swings at both high-frequency and low-frequency bands. The VCO consists of a dual-resonance LC resonator and a cross-coupled switching transistor pair. The dual-resonance LC resonator comprises a parallel-tuned LC resonator and a series-resonant resonator. The proposed VCO has been implemented with the TSMC 0.18-μm 1P6M CMOS technology and the core power consumption is 1.99 mW at the DC drain-source bias of 0.51 V. The VCO can generate differential signals in the frequency range of 8.19-8.77 GHz and 3.38-3.84 and it also has comparable high output voltage swings at both low- and high-frequency bands. The die area of the dual-band VCO is 0.47 × 0.748 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2349-2352, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27097 [ABSTRACT FROM AUTHOR]

This letter presents a new differential active inductor voltage-controlled oscillator (VCO), which uses the complementary cross-coupled pairs to generate differential negative resistance. The active inductor is formed with complementary CMOS. The proposed CMOS low-phase noise VCO has been implemented with the United Manufacture Corp. (UMC) 90nm CMOS technology and the die area is 0.575 × 0.61 mm2. At the supply voltage of 0.9 V, the total power consumption is 4.5 mW. The free-running frequency of VCO is tunable from 1.22 to 1.86 GHz as the tuning voltage is varied from 0.0 to 0.9 V. The measured phase noise at 1MHz offset is −111.56 dBc/Hz at the oscillation frequency of 1.22 GHz and the figure of merit of the proposed VCO is about −166.75 dBc/Hz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2039-2042, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27030 [ABSTRACT FROM AUTHOR]

A new fully integrated, dual-band CMOS voltage controlled oscillator (VCO) is presented. The VCO is composed of a p-core cross-coupled and an n-core cross-coupled Colpitts oscillator with dual-resonance LC tank and was implemented in 90-nm CMOS technology with 1.15 V supply voltage. The circuit allows the VCO to operate at two resonant frequencies with a common LC tank. This VCO is configured with 6.3 and 10 GHz frequency bands with differential outputs. The dual-band VCO operates at 6.11-6.413 GHz and 9.72-10.24 GHz. The phase noises of the VCO operating at 9.72 and 6.4 GHz are −116.31 dBc/Hz and −122.79 dBc/Hz at 1-MHz offset, respectively, while the VCO draws 4/4.28 mA and 4.6/4.92 mW consumption at high/low frequency band from a 1.15-V supply. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1590-1593, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26882 [ABSTRACT FROM AUTHOR]

This letter proposes a wide locking range and operation range divide-by-4 injection-locked frequency divider (ILFD) in the TSMC 0.18-μm 1P6M RF-CMOS process.The divide-by-4 ILFD uses an active inductor to increase the tuning range and a transistor composite to serve an injection device with two linear mixers to enhance the locking range of ILFD. At the supply voltage of 1.7 V, and at the incident power of 0 dBm the operation range of the divide-by-4 is about 5.8 GHz, from the incident frequency 3.6 to 9.4 GHz, the percentage is 89.2%. The locking range of the divide-by-4 is 1.8 GHz, from the incident frequency 6.8 to 8.6 GHz, the percentage is about 23.4%. The core power consumption is 7.6 mW. The die area is 0.503 × 0.36 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1359-1362, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26854 [ABSTRACT FROM AUTHOR]

A high-performance quadrature voltage-controlled oscillator (QVCO) with ring inductor is studied. The QVCO uses a closed-loop ring inductor and is composed of two complementary negative transconductance cells to replenish the energy loss due to the resistive LC resonator and is implemented in a standard TSMC 90 nm 1P9M CMOS technology. This QVCO operates between 7.05 and 8.15 GHz. The measured phase noise of the VCO operating at 8.15 GHz is −119.98 dBc/Hz at 1-MHz offset while the QVCO draws 4.2 mA and 3.57 mW consumption from a supply voltage of 0.85 V. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:839-842, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26714 [ABSTRACT FROM AUTHOR]

This letter proposes a BiCMOS voltage-controlled oscillator (VCO), which was implemented in the standard TSMC 0.18 μm SiGe 3P6M BiCMOS process. The VCO consists of an nMOSFET cross-coupled oscillator stacked in series with source degenerated HBT diodes. SiGe HBT has an inherently low flicker noise compared to CMOS devices. At the supply voltage of 1.5 V, the output phase noise of the VCO is −122.01 dBc/Hz at 1 MHz offset frequency from the carrier frequency of 5.6 GHz, and the figure of merit is −190.43 dBc/Hz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:605-608, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26619 [ABSTRACT FROM AUTHOR]

In this letter, a new LC-ring quadrature voltage-controlled oscillator (QVCO) is proposed. The proposed 0.18-μm CMOS QVCO uses a new composite LC resonator, and it occupies the die area of 0.61 × 0.95 mm2. At the supply voltage of 1.2 V, the total power consumption is 3.7 mW. The free-running frequency of the QVCO is tunable from 3.86 to 4.22 GHz as the tuning voltage is varied from 0.0 to 1.2 V. The measured phase noise at 1 MHz frequency offset is −123.42 dBc/Hz at the oscillation frequency of 3.94 GHz and the figure of merit of the proposed QVCO is −190.38 dBc/Hz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 54:474-477, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26549 [ABSTRACT FROM AUTHOR]

A high operation frequency multimodulus injection locked frequency divider (ILFD) has been proposed and it is based on a cross-coupled voltage-controlled oscillator with the parallel-injection heterojunction bipolar transistors (HBTs), and was fabricated in the 0.35 μm silicon-germanium (SiGe) 3P3M BiCMOS technology. The die area is 0.82 × 0.748 mm2. The metal-oxide-semicondcutor (MOS) varactor is used to tune the frequency range and operation range. The ILFD has wide divide-by-3 locking range due to the parallel injection HBTs with an inductive boosted source voltage. When the supply voltage VCC is 1.2 V and the tuning voltage of the free-running ILFD is tuned from 0 to 1.2 V, the divider's free-running oscillation frequency is tunable from 6.21 to 7.379 GHz, and at the incident power of 0 dBm the divide-by-3 operation range is 2.7 GHz, continuously from the incident frequency 19.2 to 21.9 GHz. The divide-by-3 locking range is 0.8 GHz, from the incident frequency 20.9 to 21.7 GHz. The divide-by-2 locking range is 0.8 GHz, from the incident frequency 15.2 to 16.0 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:379-383, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26593 [ABSTRACT FROM AUTHOR]

This article proposes a dual-resonance CMOS LC-tank injection-locked frequency doubler (ILFD) fabricated in the 0.18 μm CMOS process and describes the circuit design, operation principle, and measurement results of the ILFD. The ILFD circuit is composed of a dual-resonance first-harmonic injection-locked oscillator with dual-injection ports, a wide-band frequency doubler, and a transformer balun. At the supply voltage of 0.7 V, the dc power consumption is 5.39 mW. At the incident power of 0 dBm, the ILFD has high/low operation range from the incident frequency 3.9/1.7 to 6.1/2 GHz to provide a dual-band signal source with the frequency 7.8/3.4-12.2/4 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:193-196, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26501 [ABSTRACT FROM AUTHOR]

This article presents a new quadrature voltage-controlled oscillator (QVCO). The LC-tank QVCO consists of two first-harmonic injection-locked oscillators (ILOs). The outputs of one ILO are injected to the gates of the MOS transistors on the other ILO and vice versa so as to force the two local oscillator (LOs) operate in quadrature. The injection metal-oxide-semiconductor field-effect transistors (MOSFETs) are also used as frequency tuning varactors. The QVCO has been implemented with the Taiwan Semiconductor Manufacture Company (TSMC) 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology and the die area is 0.646 mm × 0.841 mm. At the supply voltage of 1.3 V, the total power consumption is 9.58 mW. The free-running frequency is tunable from 5.44 to 5.95 GHz as the tuning voltage is varied from 0.2 to 2.0 V. The measured phase noise at 1 MHz offset is −121.52 dBc/Hz at the oscillation frequency of 5.91 GHz and the figure of merit (FOM) of the proposed QVCO is about −187.14 dBc/Hz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2631-2634, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26363 [ABSTRACT FROM AUTHOR]

This article presents a differential cross-coupled complementary Colpitts CMOS voltage-controlled oscillator (VCO).The low phase noise CMOS VCO has been implemented with the TSMC 0.35-μm 2P4M CMOS technology and adopts a pair of cross-coupled PMOS transistors to achieve faster start-up oscillation. The VCO operates from 6.16 to 6.5 GHz with 5.3% tuning range. The measured phase noise at 1 MHz offset is −121.12 dBc/Hz at 6.417 GHz. The power consumption of the VCO core is 6.16 mW. The figure of merit is −189.37 dBc/Hz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26192 [ABSTRACT FROM AUTHOR]

This letter proposes a dual-band divide-by-2 transformer-coupled quadrature injection-locked frequency divider (QILFD).The QILFD is composed of a transformer-coupled quadrature voltage controlled oscillator and two injection MOSFETs. The CMOS QILFD has been implemented with the Taiwan Semiconductor Manufacture Company (TSMC) 0.18 μm CMOS technology, and the core power consumption is 3.997 mW at the supply voltage of 0.7 V. The tank impedance of the QILFD shows a dual resonance behavior, which leads to a dual-band locking range at a fixed bias condition. At the injection input power of 3 dBm, the low-band and high-band divide-by-2 locking ranges are from 6.90 to 8.56 GHz and 9.52 to 12.10 GHz, respectively. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26074 [ABSTRACT FROM AUTHOR]

This letter proposes a CMOS injection-locked frequency divider (ILFD) fabricated in a 0.35-μm CMOS process.The ILFD circuit is realized with a cross-coupled CMOS LC-tank oscillator, and the external injection is carried out through the gate of a waffle MOSFET. The self-oscillating ILFD is injection-locked by second-/fourth-harmonic input to obtain the division order of two/four. Measurement results show that at the supply voltage of 0.9 V and at the incident power of 0 dBm, the locking range is from the incident frequency 4.25 to 6.35 GHz in the divide-by-2 mode. The locking range is from the incident frequency 10.75 to 11.25 GHz in the divide-by-4 mode. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26064 [ABSTRACT FROM AUTHOR]

A 7-GHz NMOS Armstrong cross-coupled voltage-controlled oscillator (VCO) is designed and implemented in a 0.18 μm CMOS one-poly six-metal (1P6M) process. The differential VCO uses two single-ended Armstrong oscillators coupled via a pair of cross-coupled transistors and a pair of varactors, and it also uses the self-injection locking technique to reduce the phase noise. At the dc drain-source voltage of 0.6 V, the output phase noise of the VCO is −110.9 dBc/Hz at 1-MHz offset frequency from the carrier frequency of 7.45 GHz and the figure of merit is −186.26 dBc/Hz. Total VCO core power consumption is 1.614 mW. Tuning range is 1.16 GHz, from 6.42 to 7.58 GHz, while the control voltage was tuned from 0 to 2 V. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:728-731, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25826 [ABSTRACT FROM AUTHOR]

A fourth order resonator has been implemented to design an injection locked frequency divider (ILFD) implemented in a 0.35-μm SiGe 3P3M BiCMOS process. The ILFD is realized with a cross-coupled HBT LC-tank oscillator with switched varactor bias for frequency band selection. The LC tank is a 4th order resonator and it can operate with two tunable frequency bands. Measurement results show that at the supply voltage of 1.25 V, the free-running frequency can be from 3.22 (6.76) to 3.41 (7.53) GHz for the low-(high-) frequency band. The divide-by-2 operational locking range can be from 6.3 (12.8) to 6.95 (15.3) GHz for the low-(high-) frequency band. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2762-2765, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25586 [ABSTRACT FROM AUTHOR]

A new fully integrated CMOS quadrature voltage-controlled oscillator (QVCO) is presented.The QVCO is composed of two cross-coupled nMOSFETs in shunt with a parallel-tuned LC resonator and was implemented in 0.18 μm CMOS technology. The source of nMOSFET is in series with a degenerated pMOSFET modulated by the VCO output signal. The negative resistance cell in the QVCO is a transconductance-enhanced Colpitts-like cell used to improve the start-up oscillation. The QVCO is tunable from 7.04 to 8.08 GHz. Although the tuning voltage varies from 0 to 2 V. The phase noise of the QVCO operating at 7.09 GHz is −120.5 dBc/Hz at 1 MHz offset, while the QVCO draws 4 mA and uses 4 mW consumption. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1453-1455, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26820 [ABSTRACT FROM AUTHOR]

A new wide locking range active-inductor divide-by-3 injection-locked frequency divider (ILFD) using a standard 0.18-μm CMOS process is presented.The push-push ILFD circuit is realized with a push-push cross-coupled n-core MOS LC-tank oscillator. The core power consumption of the ILFD core is 7.41 mW. The divider's free-running frequency is tunable from 1.39 to 3.18 GHz by tuning the varactor's control bias, and at the incident power of 0 dBm the maximum locking range is 2.9 GHz (43.6%), from the incident frequency 5.2 to 8.1 GHz. The operation range is 5.9 GHz (80.27%), from 4.4 to 10.3 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2771-2773, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26426 [ABSTRACT FROM AUTHOR]

A new fully integrated, CMOS Clapp quadrature voltage-controlled oscillator (QVCO) is presented.The QVCO is composed of two differential n-core Clapp VCOs coupled by four pMOSFETs and was implemented in the 0.18-μm CMOS technology with 0.9-V supply voltage. The die area is 0.574 × 0.866 mm. At the supply voltage of 0.9 V, the total power consumption is 12.2 mW. The free-running frequency of the QVCO is tunable from 7.89 to 9.3 GHz as the tuning voltage is varied from 0 to 2 V. The measured phase noise at 1-MHz frequency offset is −118.65 dBc/Hz at the oscillation frequency of 7.89 GHz, and the figure of merit of the proposed QVCO is about −185.71 dBc/Hz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26109 [ABSTRACT FROM AUTHOR]

A diode-ring coupling technique has been used to design quadrature voltage-controlled oscillators (QVCOs), which consist of two n-core VCOs.The proposed CMOS QVCOs have been implemented with the TSMC 0.18 μm CMOS technology. A single-band and a dual-band QVCOs have been implemented to support the feasibility of the coupling technique. The die area of the single-band QVCO is 0.506 × 0.905 mm. At the supply voltage of 0.54 V, the total power consumption is 1.78 mW. The free-running frequency of the QVCO is tunable from 4.295 to 5.185 GHz as the tuning voltage is varied from 0.0 to 1.1 V. The measured phase noise at 1 MHz frequency offset is −114 dBc/Hz at the oscillation frequency 4.587 GHz, and the figure of merit of the proposed QVCO is −184.73 dBc/Hz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:551-553, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25774 [ABSTRACT FROM AUTHOR]

A wide-band ÷3 injection locked frequency divider (ILFD) has been proposed, and it is based on a single-stage voltage-controlled oscillator with active-inductor and HBT diodes, and was fabricated in the 0.35 μm silicon-germanium 3P3M BiCMOS technology. The ILFD has wide operation range and was performed by injecting a differential signal to the bases of the injection HBTs. At the supply voltage V = 1.8 V, the oscillation frequency of the ILFD with two tuning voltages is tunable from 4.17 to 2.12 GHz, and at the incident power of 0 dBm, the ÷3 operation range is 5.93 GHz, from the incident frequency 6.3 to 12.23 GHz. The die area is 0.59 × 0.63 mm. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:609-611, 2011; View this article at wileyonlinelibrary.com. DOI 10.1002/mop.25771 [ABSTRACT FROM AUTHOR]