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A differential BiCMOS divide-by-4 injection-locked frequency divider.
- Source :
-
Microwave & Optical Technology Letters . Dec2012, Vol. 54 Issue 12, p2825-2828. 4p. 1 Black and White Photograph, 1 Diagram, 1 Chart, 3 Graphs. - Publication Year :
- 2012
-
Abstract
- A low power wide locking range divide-by-4 injection-locked frequency divider (ILFD) is proposed in the letter and was implemented in the TSMC 0.18 μm SiGe BiCMOS process. The divide-by-4 ILFD uses a cross-coupled voltage-controlled oscillator with an active inductor and a three-transistor composite consisted of two nMOSFETs and one pMOSFET to serve as an injection device with the function of linear and nonlinear mixers. At the supply voltage of 1.5 V and at the incident power of 0 dBm, the operation range of the divide-by-4 is 2.3 GHz, from the incident frequency 14.5 to 16.8 GHz, the percentage is 14.7%. The locking range of the divide-by-4 is 1.7 GHz, from the incident frequency from 14.6 to 16.3 GHz, the percentage is 11%. The core power consumption is 1.5 mW. The die area is 0.465 × 0.317 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2825-2828, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27204 [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08952477
- Volume :
- 54
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Microwave & Optical Technology Letters
- Publication Type :
- Academic Journal
- Accession number :
- 80236149
- Full Text :
- https://doi.org/10.1002/mop.27204