Wide-band ÷3 injection locked frequency divider in 0.35 μm SiGe BiCMOS.

A wide-band ÷3 injection locked frequency divider (ILFD) has been proposed, and it is based on a single-stage voltage-controlled oscillator with active-inductor and HBT diodes, and was fabricated in the 0.35 μm silicon-germanium 3P3M BiCMOS technology. The ILFD has wide operation range and was performed by injecting a differential signal to the bases of the injection HBTs. At the supply voltage V = 1.8 V, the oscillation frequency of the ILFD with two tuning voltages is tunable from 4.17 to 2.12 GHz, and at the incident power of 0 dBm, the ÷3 operation range is 5.93 GHz, from the incident frequency 6.3 to 12.23 GHz. The die area is 0.59 × 0.63 mm. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:609-611, 2011; View this article at wileyonlinelibrary.com. DOI 10.1002/mop.25771 [ABSTRACT FROM AUTHOR]