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Your search keyword '"S. N. Naumenko"' showing total 2 results
Start Over Author "S. N. Naumenko" Journal journal of surface investigation. x-ray, synchrotron and neutron techniques
2 results on '"S. N. Naumenko"'

1. Effect of low-energy X-ray radiation on the electrophysical properties of silicon crystals of n- and p-type conductivity

Author

A. N. Krit, A. B. Nadtochiy, L. P. Steblenko, S. N. Naumenko, Yu. L. Kobzar, A. N. Kuryliuk, D. V. Kalinichenko, and A. A. Podolyan

Subjects
010302 applied physics, Materials science, Silicon, business.industry, Surface photovoltage, X-ray, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Radiation, Conductivity, 021001 nanoscience & nanotechnology, 01 natural sciences, Surfaces, Coatings and Films, Monocrystalline silicon, Amplitude, chemistry, 0103 physical sciences, Optoelectronics, Thin film, 0210 nano-technology, business
Abstract

We study the kinetics of the photovoltage decay in silicon crystals, caused by the effect of lowenergy (E = 8 keV) X-ray radiation. A correlation between radiation-induced changes in the short-term and long-term components of the photovoltage decay and the charge state of the surface, determined by measuring the surface distribution of the amplitude and decay time of the photovoltage, is found.

Published
2016

2. Features of changes in the microhardness of silicon crystals exposed to low-energy X-ray radiation

Author

O. N. Krit, A. N. Kurylyuk, P. P. Kogutyuk, S. N. Naumenko, Yu. L. Kobzar, D. V. Kalinichenko, and L. P. Steblenko

Subjects
Materials science, Silicon, X-ray, Analytical chemistry, chemistry.chemical_element, NAND gate, Conductivity, Radiation, Indentation hardness, Surfaces, Coatings and Films, Crystallography, chemistry, Thin film, Layer (electronics)
Abstract

Features of changes in the microhardness of nand p-type Si crystals exposed to low-energy X-ray radiation (E = 8 keV) at low doses (D = 1.8 × 103 to 3 × 104 Gy) are studied. The changes are classified as a radiation–mechanical effect and depend on a number of factors, e.g., layer occurrence depth, siliconcrystal conductivity type, and charge-carrier concentration. The revealed difference in the radiation–mechanical effects in nand p-type Si crystals is attributed to the specific features of radiation-stimulated interdefect transformations in the studied crystals.

Published
2015

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