1. Correlation of Structural Properties and Dielectric Spectroscopy in Pb-Doped Barium Hexaferrites.
- Author
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Mahmood, Waqar, Haq, A., Rasheed, Shahid, Waqas, M., and Anis-ur-Rehman, M.
- Subjects
DIELECTRIC properties ,DIELECTRIC loss ,PERMITTIVITY ,HEAT treatment ,ELECTRONIC equipment ,BARIUM ,OPTICAL conductivity - Abstract
Ba
1-x Pbx Fe12 O19 (x = 0.0 to 1.0) was synthesized by a co-precipitation method at room temperature. Parent compounds used were oxides of iron and lead, while barium was used in a carbonated form. Acids and Di-H2 O were used as a solute. Na-Alkaline solution with molarity 5 was used for fertilization. Iron to barium ratio was kept 12. Washing played a vital role to minimize the impurities. It also improved the homogeneity. Semi-liquid-type material was obtained after overnight drying in an oven. It was further transformed into powder form which further processed, and pellets were formed for characterizations. These pellets were sintered for 3 h in a box furnace at 965 ± 5 °C. Growth along with its surface and dimensional modifications were analyzed by X-ray diffractometry (XRD) and scanning electron microscopy (SEM). It showed almost 70% phase purity. Lead physical properties like higher mobility, ionic radii (Pb2+ = 1.76 Å & Ba = 1.37 Å), and occupancy preference were the important reasons for the investigation during heat treatment. Lead doping in R blocks was another big reason for these variations. SEM showed modification in all respect in each successive composition. Frequency-based analysis of whole composition from room temperature to 973 K with a step of 100 has discussed. Frequency precession analyzer was used from 20 Hz to 3 MHz for each sample. Obtained data was used to calculate dielectric constant, dielectric loss and dielectric loss factor, and AC conductivity. Determined parameters were further studied with respect to respective temperatures during whole applied frequency spectrum. The study contains almost different behaviors from each other. Prime factors were heat treatment, impurities, dopant (x), and variation of applied electric field. These behaviors and trends could be useful for today's modern IT applications and other related electrical and electronic components like capacitors. It could also be useful for high frequency microwave and related network applications. [ABSTRACT FROM AUTHOR]- Published
- 2021
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