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Your search keyword '"Zuci Quan"' showing total 5 results
Start Over Author "Zuci Quan" Journal journal of applied physics
5 results on '"Zuci Quan"'

1. Microstructure, electrical and magnetic properties of Ce-doped BiFe[O.sub.3] thin films

Author

Zuci Quan, Wei Liu, Hao Hu, Sheng Xu, Sebo, Bobby, Guojia Fang, Meiya Li, and Xingzhong Zhao

Subjects
Cerium -- Chemical properties, Cerium -- Magnetic properties, Iron alloys -- Magnetic properties, Iron alloys -- Electric properties, Raman spectroscopy -- Usage, Scanning electron microscopes -- Usage, Semiconductor doping -- Analysis, Physics
Abstract

The microstructure and chemical bonding states of pure and Ce-doped BiFe[O.sub.3] (BFO) films are characterized by scanning electron microscope (SEM) and Raman spectrum. The enhanced magnetic properties for the [Bi.sub.1-x][Ce.sub.x]Fe[O.sub.3] (BCFO) films are attributed to the presence of [Fe.sup.2+] caused by oxygen vacancies, the suppressed spiral spin structure, and/or the increase canting angle induced by Ce doping.

Published
2008

2. The formation and electronic structures of 3d transition-metal atoms doped in silicon nanowires

Author

Zuci Quan, Jingbo Li, Shu-Shen Li, and Jian-Bai Xia

Subjects
Nanotechnology -- Research, Semiconductor doping -- Analysis, Silicon -- Electric properties, Transition metals -- Electric properties, Physics
Abstract

First-principles methods are used for studying the mechanism of defect formation and electronic structures for 3d transition-metal impurities doped in silicon nanowires. The results have shown that the defect formation energies of Mn and Fe impurities are lower than those of V, Cr, and Co impurities in silicon nanowires.

Published
2008

3. Effect of oxygen gas and annealing treatment for magnetically enhanced reactive ion etched ([Ba.sub.0.65], [Sr.sub.0.35])Ti[O.sub.3] thin films

Author

Baishun Zhang, Zuci Quan, Tianjin Zhang, Tao Guo, and Shaobo Mo

Subjects
Dielectric films -- Magnetic properties, Thin films -- Magnetic properties, Valence -- Research, Titanium -- Atomic properties, Physics
Abstract

Sol-gel-derived ([Ba.sub.0.65], [Sr.sub.0.35])Ti[O.sub.3] (BST) films are etched in C[F.sub.4]/Ar and C[F.sub.4]/Ar/[O.sub.2] plasmas by using magnetically enhanced reaction ion etching technology (MERIE) technology. The results have indicated that there are no significant differences between the unetched BST film and the postannealed after etched film with respect to the fitted formulas and average valences of Ti cations.

Published
2007

4. Microstructure, electrical and magnetic properties of Ce-doped BiFeO3 thin films

Author

Guojia Fang, Bobby Sebo, Hao Hu, Meiya Li, Xingzhong Zhao, Zuci Quan, Sheng Xu, and Wei Liu

Subjects
Materials science, Doping, Analytical chemistry, General Physics and Astronomy, Dielectric, Microstructure, Magnetic hysteresis, Ferroelectricity, symbols.namesake, Nuclear magnetic resonance, Octahedron, symbols, Thin film, Raman spectroscopy
Abstract

Bi1−xCexFeO3 (x=0, 0.05, 0.1, 0.15, and 0.20) (BCFO) thin films were deposited on Pt/TiN/Si3N4/Si and fluorine-doped SnO2 glass substrates by sol-gel technique, respectively. The effect of Ce doping on the microstructure, electrical and magnetic properties of BCFO films was studied. Compared to counterparts of BiFeO3 (BFO) film, the fitted Bi 4f7/2, Bi 4f5/2, Fe 2p3/2, Fe 2p1/2, and O 1s peaks for Bi0.8Ce0.2FeO3 film shift toward higher binding energy regions by amounts of 0.33, 0.29, 0.43, 0.58, and 0.49 eV, respectively. Raman redshifts of 2–4 cm−1 and shorter phonon lifetimes for the Bi0.8Ce0.2FeO3 film might be related to anharmonic interactions among Bi–O, Ce–O, (Bi, Ce)–O, and Fe–O bonds in the distorted oxygen octahedron. Compared to the pure counterparts, the dielectric and ferroelectric properties of the Bi0.8Ce0.2FeO3 film are improved due to the decreased oxygen vacancies by the stabilized oxygen octahedron. Current density values for the BFO and Bi0.8Ce0.2FeO3 film capacitors are 9.89×10−4 and...

Published
2008

5. Effect of oxygen gas and annealing treatment for magnetically enhanced reactive ion etched (Ba0.65,Sr0.35)TiO3 thin films

Author

Tao Guo, Bai-shun Zhang, Shaobo Mo, Tianjin Zhang, and Zuci Quan

Subjects
Argon, Materials science, Annealing (metallurgy), Inorganic chemistry, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, Crystallographic defect, Electron spectroscopy, Ion, chemistry, X-ray photoelectron spectroscopy, Reactive-ion etching, Thin film
Abstract

Sol-gel-derived (Ba0.65,Sr0.35)TiO3 (BST) thin films were etched in CF4∕Ar and CF4∕Ar∕O2 plasmas using magnetically enhanced reactive ion etching technology. Experimental results show that adding appropriate O2 to CF4∕Ar can better the etching effects of BST films for the increase of etching rate and decrease of etched residues. The maximum etching rate is 8.47nm∕min when CF4∕Ar∕O2 gas-mixing ratio is equal to 9∕36∕5. X-ray photoelectron spectroscopy (XPS) data confirm accumulation of reaction products on the etched surface due to low volatility of reaction products such as Ba and Sr fluorides, and these residues could be removed by annealing treatment. The exact peak positions and chemical shifts of the interested elements were deduced by fitting XPS narrow-scan spectra with symmetrical Gaussian-Lorentzian product function for Ba 3d, Sr 3d, and O 1s peaks, meanwhile asymmetrical Gaussian-Lorentzian sum function was used to fit Ti 2p doublet to adjust the multiple splitting and/or shake-up process of tran...

Published
2007

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