1. Tunneling through a dielectric/ferromagnetic/ferroelectric three-step-like composite barrier
- Author
-
Yihao Wang, Tianjin Zhang, Zhijun Ma, Jiaolian Liu, and Peng Zhou
- Subjects
010302 applied physics ,Materials science ,Condensed matter physics ,Spin polarization ,Bilayer ,Composite number ,General Physics and Astronomy ,02 engineering and technology ,Dielectric ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,01 natural sciences ,Ferroelectricity ,Condensed Matter::Materials Science ,Ferromagnetism ,0103 physical sciences ,Condensed Matter::Strongly Correlated Electrons ,0210 nano-technology ,Polarization (electrochemistry) ,Quantum tunnelling - Abstract
Electron transport in ferroelectric tunnel junctions (FTJs) with a three-step-like barrier combining a dielectric, ferromagnetic, and ferroelectric was investigated theoretically. A significant enhanced tunneling electroresistance effect was observed as compared to traditional FTJs with a bilayer composite barrier. The spin polarization also could be enhanced in a certain orientation of ferroelectric polarization. A metal/dielectric/ferromagnetic/ferroelectric/metal FTJ with a large ferromagnetic thickness is preferred for the optimal performance. The ferroelectricity in the ferroelectric layer has a weak modulation effect on the spin polarization. This work provides a way to enhance the performance of FTJs and/or to control the spin-polarized electronic transport by structure engineering.
- Published
- 2020
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