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The deposition rate and thickness evolution of the nondiamond (sp2-bonded) carbon volume fraction in very thin, but fully coalesced, nanocrystalline diamond films produced on Si substrates by microwave plasma-enhanced chemical vapor deposition from gas mixtures of CO and H2, were determined by real time spectroellipsometry. A broad subsidiary minimum in the sp2 C content was found, centered near a CO/H2 ratio of 2, corresponding to the C-H-O diamond-growth phase-diagram coordinate of about 0.5. Under these gas flow conditions, the deposition rate is a complicated function of temperature, having a peak near 550 degrees C.

Real time spectroscopic ellipsometry (SE) was used to characterize diamond nucleation by filament assisted chemical vapor deposition. The use of SEin turn led to improved control over interface contamination, substrate temperature and nuclei induction time. In addition, SE monitors interface structure and mass thickness evolution associated with the discontinuous particle film. The results show the effectivity of the use of ellipsometric methods for thin film nucleation characterization.

Presents a study that investigated the role of fluid flow and heat transfer in the chemical vapor deposition of diamond films. Methodology; Effect of fluid flow and heat transfer on the quality of the diamond films; Influence of fluid flow and heat transfer on the rate of chemical vapor deposition.

Presents a study that examined the effects of noble gases on diamond deposition from methane-hydrogen microwave plasmas. Background on diamond thin films; Assessment of the influence of the degree of excitation of reactant molecules; Results and discussion.

Focuses on a study which described the epitaxial growth of noncrystalline diamond thin film on silicon surface. Background to the study; Results; Discussion.

Presents a study that measured the barrier height of Schottky diodes for aluminum and gold rectifying contacts to p-type chemical-vapor-deposited diamond thin films using the internal photoemission technique. Significance of the electrical properties of semiconductor diamond; Deposition of the diamond films on single-crystal silicon as well as on fused silica substrates for film characterization; Confirmation of the diamond structure of the films.