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Instrumentation in space and laboratory - Conference, Boston, October 1966

In this paper, we use high- and low-magnification optical microscope images, thermal infrared camera images, and scanning electron microscope images to identify failure locations in heavy-ion-irradiated Schottky diodes. After failures have been identified, the parts were cross-sectioned to describe the structure of the failures and energy dispersive x-ray spectroscopy was used to characterize the materials in the failure structures.

In this paper, we irradiate a number of silicon power Schottky diodes from a variety of manufacturers. The tested diodes represent a wide assortment of reverse voltages and forward currents. Additionally, we review correlations between single-event failures in Schottky diodes and device electrical parameters. The spatial locations of failures in the diode are discussed, as well as a possible explanation for why the failures occur. Based on these correlations to date, we propose a derating scheme for Schottky diodes flown in a heavy ion environment and suggest screening procedures for decreasing the risks of such failures.

The papers presented in this volume provide an overview of recent theoretical and experimental research related to nuclear and space radiation effects. Topics dicussed include single event phenomena, radiation effects in particle detectors and associated electronics for accelerators, spacecraft charging, and space environments and effects. The discussion also covers hardness assurance and testing techniques, electromagnetic effects, radiation effects in devices and integrated circuits, dosimetry and radiation facilities, isolation techniques, and basic mechanisms.

This paper discusses the use of boron implantation on high resistivity P type silicon before oxide growth to compensate for the presence of charge states in the oxide and oxide/silicon interface. The presence of these charge states on high resistivity P type silicon produces an inversion layer which causes high leakage currents on N(+)P junctions and high surface conductance. Compensating the surface region by boron implantation is shown to result in oxide passivated N(+)P junctions with very low leakage currents and with low surface conductance.

Tests showed that bipolar chips in the attitude control computer of the Galileo spacecraft would likely cause catastrophic mission failure due to single particle upset. This paper describes the design and testing of CMOS replacements which are speed compatible with the bipolar parts and are immune to upset by 165-MeV krypton ions.

An addressable matrix of 32 CMOS transistors was designed into a test chip to be flown on the Combined Release and Radiation Effects Satellite (CRRES). In this paper the matrix is described along with a SPICE-like parameter extraction procedure called JMOSFIT, and Cobalt 60 radiation test results are presented that illustrate the shift in the 21-MOSFET parameters derived from JMOSFIT.

A new Monte Carlo code has been written to simulate the response of the new University of California double scatter gamma ray telescope. This package of modular software routines, written in VAX FORTRAN 77 simulates the detection of 0.1 to 35 MeV gamma rays. The new telescope is flown from high altitude balloons to measure medium energy gamma radiation from astronomical sources. This paper presents (1) the basic physics methods in the code, and (2) the predicted response functions of the telescope. Gamma ray processes include Compton scattering, pair production and photoelectric absorption in plastic scintillator, NaI(Tl) and aluminum. Electron transport processes include ionization energy loss, multiple scattering, production of bremsstrahlung photons and positron annihilation.

Single-Event Upset (SEU) in bipolar integrated circuits (ICs) is caused by charge collection from ion tracks in various regions of a bipolar transistor. This paper presents experimental data which have been obtained wherein the range-energy characteristics of heavy ions (Br) have been utilized to determine the cross section for soft-error generation as a function of charge collected from single-particle tracks which penetrate a bipolar static RAM. The results of this work provide a basis for the experimental verification of circuit-simulation SEU modeling in bipolar ICs.

This paper discusses the measurements of the electromagnetic interference (EMI) generated during discharges of Mylar samples. The two components of EMI, the conducted emission and the radiated emission, are characterized by the replacement current and the radiated RF spectrum respectively. The measured radiated RF spectra reveal important information on the source of the electromagnetic radiation. The possible sources are the replacement current pulse and the discharged generated plasma. The scaling of the amplitudes of the EMI, as a function of the area of the test sample, is also discussed.

The time dependence of the emitted currents during arcing on solar cell arrays is being studied. The arcs are characterized using three parameters: the voltage change of the array during the arc (i.e., the charge lost), the peak current during the arc, and the time constant describing the arc current. This paper reports the dependence of these characteristics on two array parameters, the interconnect bias voltage and the array capacitance to ground. It was found that the voltage change of the array during an arc is nearly equal to the bias voltage. The array capacitance, on the other hand, influences both the peak current and the decay time constant of the arc. Both of these characteristics increase with increasing capacitance.

This paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20 percent within 30 days after irradiation.

This paper reports on a study of damage equivalence in rad-hard MOS devices with 100,000 rads (SiO2) capability. Damage sensitivities for electrons of 1, 2, 3, 5, and 7 MeV, protons of 1, 3, 7, 22, and 40 MeV, 3.4-MeV alphas, and Co-60 gammas were measured and compared. Results indicated that qualitatively the same charge recombination effects occurred in hard oxide devices for doses of 100,000 rads (SiO2) as in soft oxide parts for doses of 1 to 4 krads (SiO2). Consequently, damage equivalency or non-equivalency depended on radiation type and energy. However, recovery effects, both during and after irradiation, controlled relative damage sensitivity and its dependency on total dose, dose rate, supply bias, gate bias, radiation type, and energy. Correction factors can be derived from these data or from similar tests of other hard oxide type, so as to properly evaluate the combined effects of the total space environment.

This paper reports on some investigations of dosimetry, annealing, irradiation sequences, and radioactive sources, involved in the determination of radiation effects on MOS devices. Results show that agreement in the experimental and theoretical surface to average doses support the use of thermo-luminescent dosimeters (manganese activated calcium fluoride) in specifying the surface dose delivered to thin gate insulators of MOS devices. Annealing measurements indicate the existence of at least two energy levels,s or a activation energies, for recovery of soft oxide MOS devices after irradiation by electrons, protons, and gammas. Damage sensitivities of MOS devices were found to be independent of combinations and sequences of radiation type or energies. Comparison of various gamma sources indicated a small dependence of damage sensitivity on the Cobalt facility, but a more significant dependence in the case of the Cesium source. These results were attributed to differences in the spectral content of the several sources.

This paper summarizes the state-of-the-art of the complex field of radiation effects on spacecraft materials. It is intended as a guide for designers of systems exposed to damaging electrons and protons. The emphasis is on the relative damage levels for the more common materials that may be used. Information on the preliminary flux and fluence levels of the yet to be designed Jupiter orbiter, Galileo, is also presented.