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27 results on '"InP"'

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1. Investigation on Effect of Doped InP Subchannel Thickness and Delta-Doped InP Layer of Composite Channel HEMT.

2. Effect of Fixed Charges at Interface Between InP and Bonding Layer on Heterogeneous Integration of InP HEMTs.

3. The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs.

4. In0.53Ga0.47As/InP Trench-Gate Power MOSFET Based on Impact Ionization for Improved Performance: Design and Analysis.

5. Impact Ionization in Absorption, Grading, Charge, and Multiplication Layers of InP/InGaAs SAGCM APDs With a Thick Charge Layer.

6. Cryogenic Performance of Low-Noise InP HEMTs: A Monte Carlo Study.

7. Material Selection for Minimizing Direct Tunneling in Nanowire Transistors.

8. Influence of Built-In Drift Fields on the Performance of InP-Based HBTs Grown by Solid-Source MBE.

9. A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to \In0.53 \Ga0.47\As and InP Capacitors.

10. Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models.

11. InP DHBT-Based IC Technology for 100-Gb/s Ethernet.

12. A Double-Heterojunction Bipolar Transistor Having a Degenerately Doped Emitter and Backward-Diode Base Contact.

13. High-Gain Arsenic-Rich n-p-n InP/GaAsSb DHBTs With FT > 420 GHz.

14. A Simulation Study of the Switching Times of 22- and 17-nm Gate-Length SOI nFETs on High Mobility Substrates and Si.

15. Lateral Scale Down of InGaAs/InAs Composite-Channel HEMTs With Tungsten-Based Tiered Ohmic Structure for 2-S/mm gm and 500-GHz fT.

16. 50-nm Self-Aligned and "Standard" T-gate InP pHEMT Comparison: The Influence of Parasitics on Performance at the 50-nm Node.

17. Velocity Enhancement in Cryogenically Cooled InP-Based HEMTs on (411)A-Oriented Substrates.

18. Stress-Related Hydrogen Degradation of 0.1-µm InP HEMTs and GaAs PHEMTs.

19. Device Scaling Physics and Channel Velocities in AIGaN/GaN HFETs: Velocities and Effective Gate Length.

20. InP HEMT Downscaling for Power Applications at W Band.

21. Surface Recombination Currents in "Type-II" NpN InP-GaAsSb-lnP Self-Aligned DHBTs.

22. Hydrogen Sensitivity of InP HEMTS With WSiN-Based Gate Stack.

23. The Influence of Emitter Material on Silicon Nitride Passivation-Induced Degradation in InP-Based HBTs.

24. Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures.

25. Material Selection for Minimizing Direct Tunneling in Nanowire Transistors

26. Influence of Built-In Drift Fields on the Performance of InP-Based HBTs Grown by Solid-Source MBE

27. InP DHBT-Based IC Technology for 100-Gb/s Ethernet

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