The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs.

The electron mobility in strained ultra-thin InGaAs-on-InP MOSFETs is investigated combining band-structure and physics-based modeling including all relevant scattering mechanisms and effects. The most important effect is Fermi-level pinning which occurs due to high density of interface states at InGaAs/oxide interface. Different interface states densities are considered in order to investigate impact of interface states on electron mobility in biaxially strained ultra-thin InGaAs-on-InP structures. We report the tensile biaxial strain values that can alleviate the unfavorable impact of interface states charge on electron transport. [ABSTRACT FROM AUTHOR]