1. High-Performance Pentacene-Based Thin-Film Transistors and Inverters With Solution-Processed Barium Titanate Insulators.
- Author
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Wei, Chia-Yu, Kuo, Shu-Hao, Huang, Wen-Chieh, Hung, Yu-Ming, Yang, Chih-Kai, Adriyanto, Feri, and Wang, Yeong-Her
- Subjects
THIN film transistors ,ELECTRIC inverters ,PENTACENE ,ELECTRIC properties of barium titanate ,ELECTRIC insulators & insulation ,POWER transmission - Abstract
High-performance pentacene-based thin-film transistors and inverters with solution-processed barium titanate (BTO) insulators are demonstrated. The current–voltage characteristics of the transistors show high mobility of 9.53 \cm^2\V^-1\s^-1 at smaller VG = -\3.5\ \V and VD = -\5\ \V, a low threshold voltage of -1.5 V, and a subthreshold slope of 599 mV/dec. Large grain and small crystalline sizes are observed from atomic force microscopy images and X-ray diffraction analysis of pentacene films. The results are verified through Raman spectroscopy and a theoretical Marcus–Hush equation to understand the higher intermolecular coupling, resulting in easier carrier transports in pentacene molecules. In order to investigate the behavior of high-permittivity materials of BTO insulators in a logic circuit, simple and low-operating-voltage inverters are fabricated, and the gain is approximately 8.76 under a small operating voltage range from 0 to -5 V. [ABSTRACT FROM PUBLISHER]
- Published
- 2012
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