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AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped \TiO2 as a Gate Dielectric.
- Source :
- IEEE Transactions on Electron Devices; Jan2012, Vol. 59 Issue 1, p121-127, 7p
- Publication Year :
- 2012
-
Abstract
- Barium-doped \TiO2 films deposited on GaN layers at low temperature through a simple liquid phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the MOS structure on n-doped GaN show that the leakage current density is about \5.09 \times \10^-9\ \A/cm^2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing and a lower subthreshold swing (110 mV/decade) are obtained. The gate leakage current density is significantly improved, and the gate pulse measurement shows that the current collapse is more suppressed for MOSHEMTs. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 59
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 70576860
- Full Text :
- https://doi.org/10.1109/TED.2011.2171690