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High-Performance Pentacene-Based Thin-Film Transistors and Inverters With Solution-Processed Barium Titanate Insulators.
- Source :
- IEEE Transactions on Electron Devices; Feb2012, Vol. 59 Issue 2, p477-484, 8p
- Publication Year :
- 2012
-
Abstract
- High-performance pentacene-based thin-film transistors and inverters with solution-processed barium titanate (BTO) insulators are demonstrated. The current–voltage characteristics of the transistors show high mobility of 9.53 \cm^2\V^-1\s^-1 at smaller VG = -\3.5\ \V and VD = -\5\ \V, a low threshold voltage of -1.5 V, and a subthreshold slope of 599 mV/dec. Large grain and small crystalline sizes are observed from atomic force microscopy images and X-ray diffraction analysis of pentacene films. The results are verified through Raman spectroscopy and a theoretical Marcus–Hush equation to understand the higher intermolecular coupling, resulting in easier carrier transports in pentacene molecules. In order to investigate the behavior of high-permittivity materials of BTO insulators in a logic circuit, simple and low-operating-voltage inverters are fabricated, and the gain is approximately 8.76 under a small operating voltage range from 0 to -5 V. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 59
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 71539046
- Full Text :
- https://doi.org/10.1109/TED.2011.2174459