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Ba0.65Sr0.35TiO3-x Bi3NbZrO9(BST-x Bi3NbZrO9, x = 0.5, 1, 3, 5, 7 wt.%) ceramics sintered at low temperature were prepared by traditional solid state reaction method. Influence of Bi3NbZrO9doping amount on the dielectric properties and microstructure of (Ba, Sr)TiO3(barium strontium titanate, BST) capacitor ceramics by means of X-ray diffraction(XRD), Scanning electron microscopy (SEM) and traditional solid state sintering method. The results showed that the impurity materials phase were appeared when Bi3NbZrO9doping amount increased. When Bi3NbZrO9doping amount increased, dielectric constant(ϵr)increased firstly and then decreased and then increased, dielectric loss(tanδ) decreased firstly and then increased, the capacitance temperature changing rate(ΔC/C) decreased. When Bi3NbZrO9doped amount was 1 wt.% and the sintered temperature was 1280°C, the BST ceramics possessed good comprehensive property with ϵrof 2325, tanδ of 0.0048, Ebof 7.8 kV/mm(AC), ΔC/C of −12.9∼14.3% in the temperature range of −30°C∼85°C and the capacitance temperature characteristic was consistent with Y5R. [ABSTRACT FROM PUBLISHER]

Structure and dielectric property of CaTiSiO5doped (Ba, Sr)TiO3(barium strontium titanate, BST) capacitor ceramics were studied by means of X-ray diffraction(XRD),Scanning electron microscopy(SEM) and traditional solid sate sintered method. The results showed that dielectric loss of BST ceramics doped with CaTiSiO5had low value, moving effect and broadening effect of CaTiSiO5for curie peak of BST ceramics were obvious. Dielectric constant(ϵr) increased firstly and then decreased, dielectric loss (tanδ) increased firstly and then decreased, AC withstand voltage strength(Eb) increased firstly and then decreased, capacitance temperature changing rate(ΔC/C) decreased firstly and then increased in the negative temperature range and positive temperature range, when CaTiSiO5doping amount increased. The BST ceramics possessed good comprehensive property with ϵrof 2540, tanδ of 0.0036, Ebof 5.6 kV/mm(AC), ΔC/C of −18.9∼20.6% in the temperature range of −30°∼85°, the capacitance temperature characteristic was suited for Y5S, when CaTiSiO5doping amount was 0.8wt.%. [ABSTRACT FROM AUTHOR]

(Ba0.65Sr0.35)TiO3(BST) ceramics doped with MgTiO3were prepared by solid state method. Influence of MgTiO3doped amount on dielectric property and microstructure of BST ceramics were investigated. The results showed that MgTiO3doping could fine crystal grain size and made crystal grain size uniform and pore decrease and density increase. MgTiO3doping could decrease dielectric loss (tanδ) and increase dielectric constant(ϵr) of BST ceramics and increase the alternating current (AC) withstand voltage strength (Eb) and improve the capacitance temperature property. When MgTiO3doping amount was 0.8wt.%, the BST ceramics had good comprehensive property, ϵrof 4350, tanδ of 0.0055, Ebof 5.7×103V/mm (AC), the capacitance temperature property was suited for Y5U. [ABSTRACT FROM AUTHOR]