Structure and dielectric property of CaTiSiO 5 doped BST ceramics sintered at low temperature.

Structure and dielectric property of CaTiSiO5doped (Ba, Sr)TiO3(barium strontium titanate, BST) capacitor ceramics were studied by means of X-ray diffraction(XRD),Scanning electron microscopy(SEM) and traditional solid sate sintered method. The results showed that dielectric loss of BST ceramics doped with CaTiSiO5had low value, moving effect and broadening effect of CaTiSiO5for curie peak of BST ceramics were obvious. Dielectric constant(ϵr) increased firstly and then decreased, dielectric loss (tanδ) increased firstly and then decreased, AC withstand voltage strength(Eb) increased firstly and then decreased, capacitance temperature changing rate(ΔC/C) decreased firstly and then increased in the negative temperature range and positive temperature range, when CaTiSiO5doping amount increased. The BST ceramics possessed good comprehensive property with ϵrof 2540, tanδ of 0.0036, Ebof 5.6 kV/mm(AC), ΔC/C of −18.9∼20.6% in the temperature range of −30°∼85°, the capacitance temperature characteristic was suited for Y5S, when CaTiSiO5doping amount was 0.8wt.%. [ABSTRACT FROM AUTHOR]