Study on dielectric property of BST based ceramics doped with MgTiO 3.

(Ba0.65Sr0.35)TiO3(BST) ceramics doped with MgTiO3were prepared by solid state method. Influence of MgTiO3doped amount on dielectric property and microstructure of BST ceramics were investigated. The results showed that MgTiO3doping could fine crystal grain size and made crystal grain size uniform and pore decrease and density increase. MgTiO3doping could decrease dielectric loss (tanδ) and increase dielectric constant(ϵr) of BST ceramics and increase the alternating current (AC) withstand voltage strength (Eb) and improve the capacitance temperature property. When MgTiO3doping amount was 0.8wt.%, the BST ceramics had good comprehensive property, ϵrof 4350, tanδ of 0.0055, Ebof 5.7×103V/mm (AC), the capacitance temperature property was suited for Y5U. [ABSTRACT FROM AUTHOR]