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This paper shows the results of experimental studies of the influence of oxygen pressure under pulsed laser deposition on the electrophysical parameters of BaTiO3 nanocrystalline films. The elemental composition of BaTiO3 films obtained at different pressures (1×10−5 Torr (vacuum) and 1×10−2 Torr (oxygen)) was studied by XPS methods. Based on the obtained results, the energy-efficient memristor structures based on BaTiO3 nanocrystalline films were proposed. It was found that 20-nm-thick BaTiO3 films based memristive structure exhibited stable resistive switching effect: HRL/LRS∼10 for 100000 cycles. The results obtained can be used to fabricate energy-efficient memristive structures. [ABSTRACT FROM AUTHOR]

To find out the effect of the rare earth doping element Holmium (Ho) on CuInS2 thin films, various studies have been carried out and the results have been reported in this paper. The PL study shows that intensity of doped film is more than undoped film. The PL emission peak appears at 570–580 nm. SEM images of CIS:Ho (4 ml) film shows agglomeration on the surface. Both synthesized film of CuInS2 appears to be amorphous in nature with chalcopyrite structure as clear from XRD. Hall measurement and optical studies were also performed. [ABSTRACT FROM AUTHOR]

To find out the effect of the rare earth doping element Holmium (Ho) on CuInS2 thin films, various studies have been carried out and the results have been reported in this paper. The PL study shows that intensity of doped film is more than undoped film. The PL emission peak appears at 570–580 nm. SEM images of CIS:Ho (4 ml) film shows agglomeration on the surface. Both synthesized film of CuInS2 appears to be amorphous in nature with chalcopyrite structure as clear from XRD. Hall measurement and optical studies were also performed. [ABSTRACT FROM AUTHOR]

This work aims to study the electrical and optical properties of CuInS2 thin films to see the impact of rare earth doping on the properties of films obtained by Chemical bath deposition (CBD) in alkaline medium at 80 °C bath temperature. The observed and calculated lattice parameters are in good agreement with each other as confirmed from structural studies. Hall mobility and other parameters were calculated. The mobility of Pr doped film was quite high. E = hν = hc λ has been used to calculate the band gaps of various doped films of CuInS2. It is found that band gap is low for Sm doped film. This could be due to small particle size. Presence of dopant has been confirmed from EDS. PC studies has been done to know about the possible states in band gap. The photoconductive gain is high in Sm doped film. The emission spectrum were recorded for the wavelength 300–1000nm. The peak sharpness in terms of intensity is very high in Sm doped films. Spherical shape particles are prominently appeared on the surface of the film. [ABSTRACT FROM AUTHOR]

The present work describes the effect of deposition temperatures and pH values on structural, morphological, and electrochemical properties of cuprous oxide (Cu2O) thin films deposited on the conductive SnO2 glass substrates by using electrodeposition technique in an acidic system. The chronoamperometry curve of the solution was tested on an electrochemical workstation. X-ray diffraction patterns indicate that the deposited films have better crystallinity which is deposited at the deposition temperature of 50 °C and pH value of 5–6. Scanning electron microscopy displays that surface morphology of the deposited films varied greatly with the deposition temperature and pH value rising. The results of quantitative study of the target product films by Energy Dispersive Spectrometer (EDS) show that they are all in line with the element content ratio of Cu2O. By measuring the resistivity and conductivity of the deposited films, it was found to be in the semiconductor range. [ABSTRACT FROM AUTHOR]

We report the preparation and characterization of vanadium substituted four-layer Aurivillius compound Bi5Fe1.5V0.5Ti2O15 using spin coating method. Ferroelectricity in the prepared films are confirmed from the well saturated polarization vs electric field (P-E) loops having remnant polarization (2 Pr) around 12.94 µC/cm2 at room temperature. In addition, low temperature P-E measurements show a decrease in Pmax and 2 Pr, which is attributed to the stabilization of defect dipole complexes and domain pinning, as seen in bismuth-based ferroelectrics. Additionally, this decrease in polarization is accompanied by an increase in imprint, confirming the presence of defect dipoles manifested as internal fields. [ABSTRACT FROM AUTHOR]