Formation of BaTiO3 thin films for energy-efficient memristive applications.

This paper shows the results of experimental studies of the influence of oxygen pressure under pulsed laser deposition on the electrophysical parameters of BaTiO₃ nanocrystalline films. The elemental composition of BaTiO₃ films obtained at different pressures (1×10⁻⁵ Torr (vacuum) and 1×10⁻² Torr (oxygen)) was studied by XPS methods. Based on the obtained results, the energy-efficient memristor structures based on BaTiO₃ nanocrystalline films were proposed. It was found that 20-nm-thick BaTiO₃ films based memristive structure exhibited stable resistive switching effect: HRL/LRS∼10 for 100000 cycles. The results obtained can be used to fabricate energy-efficient memristive structures. [ABSTRACT FROM AUTHOR]