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1. (Invited) Radiation Damage in the Ultra Wide Bandgap Semiconductor Ga2O3

2. (Invited) Comparison of High Voltage, Vertical Geometry Ga2O3 Rectifiers with GaN and SiC

3. (Invited) Simulation of the Effects of As-Grown Defects on GaN-Based Power HEMTs

4. Optimization of GaN-Based HEMTs for Chemical Sensing: A Simulation Study

5. Simulating RF Performance of Proton Irradiated AlGaN/GaN High Electron Mobility Transistors (HEMT)s

6. Simulation of the pH Sensing Capability of an Open-Gate GaN-Based Transistor

7. Continuum Modelling of Silicon Diffusion and Activation in in0.53Ga0.47As

8. Simulation of Radiation Damage in GaN HEMT Structures

9. Enhancement of AlGaN/GaN High Electron Mobility Transistor Off-State Drain Breakdown Voltage via Backside Proton Irradiation

10. (Invited) Fundamental Modeling of Radiation Effects in AlGaN/GaN HEMTs

11. Effect of Proton Irradiation on DC Performance and Reliability of Circular-Shaped AlGaN/GaN High Electron Mobility Transistors

12. (Invited) Microstrucutural Characterizaton of Stressed AlGaN/GaN HEMT Devices

13. (Invited) Simulation of GaN Device Reliability

14. (Invited)Comparison of High Voltage, Vertical Geometry Ga2O3Rectifiers with GaN and SiC

15. (Invited) Simulation of Radiation Effects in AlGaN/GaN HEMTs

16. Continuum Modelling of Silicon Diffusion and Activation in in0.53Ga0.47As

17. Effect of Proton Irradiation on DC Performance and Reliability of Circular-Shaped AlGaN/GaN High Electron Mobility Transistors

18. (Invited) Microstrucutural Characterizaton of Stressed AlGaN/GaN HEMT Devices

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