(Invited)Comparison of High Voltage, Vertical Geometry Ga2O3Rectifiers with GaN and SiC

Ga2O3 is a candidate for power electronics due to its large bandgap, controllable doping and availability of large inexpensive substrates. These include power conditioning systems, pulsed power for avionics and electric ships, solid-state drivers for heavy electric motors and advanced power management and control electronics. There are already cases where the performance exceeds the theoretical values for SiC. Existing Si, SiC (verticaldevices), and GaN (lateral devices) enjoy advantages interms of process maturity, especially for Si,where devicessuch as super-junctions surpass the unipolar “limit”. Continued development of low defect substrates, optimized epi growth and improved device design and processing methods for Ga2O3are required to push the experimental results closer to their theoretical values. The actual experimental value of VBis well below the theoretical predictions. Thermal management is a key issue in Ga2O3power devices and initial studies have appeared on both the experimental and theoretical fronts.