Simulation of Radiation Damage in GaN HEMT Structures

For decades TCAD has been a useful tool for device design. By varying structure and composition, device designers have been able to explore alternative designs and optimize device performance. Conversely, changes to device structure and properties due to environmental changes (i.e., radiation) can be modeled using TCAD. This paper explores how trap generation from radiation can alter transport and field strength in AlGaN/GaN HEMTs.