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6 results on '"Zhao, Sheng Lei"'

3. Al 0.30 Ga 0.70 N/GaN/Al 0.07 Ga 0.93 N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm

Author

Zhang Jin-Cheng, Zhang Weihang, Jiang Hai-Qing, Zhao Sheng-Lei, He Yunlong, Zou Yu, Jiang Ren-Yuan, LI Xiang-Dong, Hao Yue, and Guo Zhen-Xing

Subjects
Electron mobility, Materials science, business.industry, Transistor, General Physics and Astronomy, Semiconductor device, Double heterostructure, Crystallographic defect, law.invention, law, Optoelectronics, Breakdown voltage, business, Saturation (magnetic), Leakage (electronics)
Abstract

We report Al0.30Ga0.70N/GaN/Al0.07Ga0.93N double heterostructure high electron mobility transistors with a record saturation drain current of 1050 mA/mm. By optimizing the graded buffer layer and the GaN channel thickness, both the crystal quality and the device performance are improved significantly, including electron mobility promoted from 1535 to 1602 cm2/Vs, sheet carrier density improved from 0.87×1013 to 1.15×1013 cm−2, edge dislocation density reduced from 2.4×109 to 1.3×109 cm−2, saturation drain current promoted from 757 to record 1050 mA/mm, mesa leakage reduced by two orders in magnitude, and breakdown voltage promoted from 72 to 108 V.

Published
2015

6. Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm.

Author

Li Xiang-Dong, Zhang Jin-Cheng, Guo Zhen-Xing, Jiang Hai-Qing, Zou Yu, Zhang Wei-Hang, He Yun-Long, Jiang Ren-Yuan, Zhao Sheng-Lei, and Hao Yue

Subjects
HETEROSTRUCTURES, ELECTRON mobility, TRANSISTORS, SATURATION vapor pressure, ALUMINUM, GALLIUM nitride
Abstract

We report Al0.30Ga0.70N/GaN/Al0.07Ga0.93N double heterostructure high electron mobility transistors with a record saturation drain current of 1050 mA/mm. By optimizing the graded buffer layer and the GaN channel thickness, both the crystal quality and the device performance are improved significantly, including electron mobility promoted from 1535 to 1602 cm2/V·s, sheet carrier density improved from 0.87×1013 to 1.15×1013 cm−2, edge dislocation density reduced from 2.4×109 to 1.3×109 cm−2, saturation drain current promoted from 757 to record 1050 mA/mm, mesa leakage reduced by two orders in magnitude, and breakdown voltage promoted from 72 to 108 V. [ABSTRACT FROM AUTHOR]

Published
2015
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