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Your search keyword '"Asano, T."' showing total 14 results
Start Over Author "Asano, T." Journal applied physics letters
14 results on '"Asano, T."'

11. Al[sub 0.95]Ga[sub 0.05]As[sub 0.56]Sb[sub 0.44] for lateral oxide-confinement layer in InP-based devices.

Author

Reddy, M. H. M., Buell, D. A., Huntington, A. S., Asano, T., Koda, R., Feezell, D., Lofgreen, D., and Coldren, L. A.

Subjects
SEMICONDUCTORS, ALUMINUM compounds, INDIUM phosphide
Abstract

We report a lateral oxide-confinement layer for InP-based devices using lattice-matched AlGaAsSb. The confinement-layer-induced excess loss at different widths was extracted after de-embedding the losses due to carrier diffusion, nonradiative recombination, and changes in internal injection efficiency. The results show that AlGaAsSb oxide acts as an excellent confinement layer, and shows no excess loss down to a width of 4 µm. [ABSTRACT FROM AUTHOR]

Published
2003
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12. Interface analysis of Y-Ba-Cu-O films on Al-coated Si substrates.

Author

Asano, T., Tran, K., Byrne, A. S., Rahman, M. M., Yang, C. Y., and Reardon, J. D.

Subjects
*COPPER oxide superconductors, *HIGH temperature superconductors, *INTERFACES (Physical sciences), *SILICON
Abstract

Y-Ba-Cu-O films were deposited on Al-coated Si substrates by the plasma-spray method. The Al buffer layer appears to be effective in yielding crack-free adhesive Y-Ba-Cu-O films. Resistance measurements indicate that the films exhibit a superconducting phase below 90 K. Results of x-ray microanalysis and x-ray photoelectron spectroscopy confirm that the Al buffer forms an Al2O3 layer and prevents precipitation of Cu at the film/substrate interface. [ABSTRACT FROM AUTHOR]

Published
1989
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14. Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation

Author

Giovanni Capellini, Thomas Schroeder, Takashi Yamaha, Noriyuki Taoka, Peter Zaumseil, Ioan Costina, Tatsuya Terashima, Takanori Asano, Shigeaki Zaima, Osamu Nakatsuka, Taoka, N, Asano, T, Yamaha, T, Terashima, T, Nakatsuka, O, Costina, I, Zaumseil, P, Capellini, Giovanni, Zaima, S, and Schroeder, T.

Subjects
Materials science, Physics and Astronomy (miscellaneous), Diffusion, Analytical chemistry, chemistry.chemical_element, Substrate (electronics), GeSnSi, Deposition temperature, Flux (metallurgy), chemistry, Tin, Desorption, Layer (electronics), Deposition (law)
Abstract

The distributions of Sn concentration in GeSnSi layers formed on Ge substrate at various temperatures were investigated. High deposition temperature (Td) induces significant Sn migration and desorption, which have activation energies of 0.75 eV and 0.27 eV, respectively. A model quantitatively clarified the Sn migration fluxes during the deposition, which increase not only with increasing Td but also with the layer thickness. A non-negligible Sn flux compared with the supplied flux was found at 350 °C at the surface of the 200-nm-thick layer. Consequently, designs of layer thickness and Td taking into account the appropriate Sn flux are important to form a GeSnSi layer with uniform Sn content for future optoelectronics.

Published
2015

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