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Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation

Authors :
Giovanni Capellini
Thomas Schroeder
Takashi Yamaha
Noriyuki Taoka
Peter Zaumseil
Ioan Costina
Tatsuya Terashima
Takanori Asano
Shigeaki Zaima
Osamu Nakatsuka
Taoka, N
Asano, T
Yamaha, T
Terashima, T
Nakatsuka, O
Costina, I
Zaumseil, P
Capellini, Giovanni
Zaima, S
Schroeder, T.
Source :
Applied Physics Letters. 106:061107
Publication Year :
2015
Publisher :
AIP Publishing, 2015.

Abstract

The distributions of Sn concentration in GeSnSi layers formed on Ge substrate at various temperatures were investigated. High deposition temperature (Td) induces significant Sn migration and desorption, which have activation energies of 0.75 eV and 0.27 eV, respectively. A model quantitatively clarified the Sn migration fluxes during the deposition, which increase not only with increasing Td but also with the layer thickness. A non-negligible Sn flux compared with the supplied flux was found at 350 °C at the surface of the 200-nm-thick layer. Consequently, designs of layer thickness and Td taking into account the appropriate Sn flux are important to form a GeSnSi layer with uniform Sn content for future optoelectronics.

Details

ISSN :
10773118 and 00036951
Volume :
106
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi.dedup.....fa04c39330160169fe5340768c6d6758