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Your search keyword '"Huang, J. H."' showing total 25 results
Start Over Author "Huang, J. H." Search Limiters Peer Reviewed Journal applied physics letters
25 results on '"Huang, J. H."'

10. High magnetic-refrigeration performance of plate-shaped La0.5Pr0.5Fe11.4Si1.6 hydrides sintered in high-pressure H2 atmosphere.

Author

Sun, N. K., Guo, J., Zhao, X. G., Si, P. Z., Huang, J. H., and Zhang, Z. D.

Subjects
LANTHANUM compounds, MAGNETIC cooling, HYDRIDES, SINTERING, MAGNETIC entropy
Abstract

La(Fe, Si)13 hydride is regarded as one of the most promising room-temperature refrigerants. However, to use the alloys in an active magnetic regenerator machine, it is vital to prepare thin refrigerants. In this work, a high H2 gas pressure of 50 MPa was employed to suppress the desorption of hydrogen atoms during the sintering process of plate-shaped La0.5Pr0.5Fe11.4Si1.6 hydrides. At 330K, a high-density sintered thin plate shows a large magnetic-entropy change ΔSm of 15.5 J/kgK (106mJ/cm³K) for a field change of 2T. The volumetric DSm is almost twice as large as that of bonded La(Fe,Si)13 hydrides. Favorably, hysteresis is almost absent due to the existence of micropores with a porosity of 0.69% which has been analyzed with high-resolution X-ray microtomography. [ABSTRACT FROM AUTHOR]

Published
2015
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23. An oleic acid-capped CdSe quantum-dot sensitized solar cell.

Author

Jing Chen, Song, J. L., Sun, X. W., Deng, W. Q., Jiang, C. Y., Lei, W., Huang, J. H., and Liu, R. S.

Subjects
OLEIC acid, QUANTUM dots, SOLAR cells, DIRECT energy conversion, ELECTRIC resistors, ABSORPTION, RECOMBINATION in semiconductors
Abstract

In this letter, we report an oleic acid (OA)-capped CdSe quantum-dot sensitized solar cell (QDSSC) with an improved performance. The TiO2/OA-CdSe photoanode in a two-electrode device exhibited a photon-to-current conversion efficiency of 17.5% at 400 nm. At AM1.5G irradiation with 100 mW/cm2 light intensity, the QDSSCs based on OA-capped CdSe showed a power conversion efficiency of about 1%. The function of OA was to increase QD loading, extend the absorption range and possibly suppress the surface recombination. [ABSTRACT FROM AUTHOR]

Published
2009
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24. Dual accumulation and depletion behaviors of the arsenic precipitation in low-temperature-grown Be delta-doped GaAs.

Author

Huang, J. H., Hsieh, L. Z., Guo, X. J., and Su, Y. O.

Subjects
*ARSENIC, *BERYLLIUM, *GALLIUM arsenide
Abstract

The precipitation of arsenic in annealed Be delta-doped GaAs grown by low-temperature molecular-beam epitaxy has been studied using transmission electron microscopy. It was found that the planes doped with [Be] = 1.0 10[sup 14] cm[sup -2] always accumulate As precipitates, while the planes doped with [Be] = 1 × 10[sup 13] cm[sup -2] tend to deplete As precipitates. In contrast, the planes doped with [Be] = 3 and 2 × 10[sup 13] cm[sup -2] exhibit a weak accumulation property when annealed at 700 °C, but a depletion property when annealed 800 °C. The existence of twins and/or precipitates around the [Be]= 1.0 × 10[sup 14] cm[sup -2] doped planes found in the as-grown sample suggests a strain-induced mechanism to account for the As precipitates accumulation on these planes. [ABSTRACT FROM AUTHOR]

Published
2003
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25. Piezoelectric effect on Al[sub 0.35-δ]In[sub δ]Ga[sub 0.65]N/GaN heterostructures.

Author

Lo, Ikai, Tsai, J. K., Tu, Li-Wei, Hsieh, K. Y., Tsai, M. H., Liu, C. S., Huang, J. H., Elhamri, S., Mitchel, W. C., and Sheu, J. K.

Subjects
PIEZOELECTRICITY, HETEROSTRUCTURES
Abstract

Al[sub 0.35-δ]In[sub δ]Ga[sub 0.65]N/GaN heterostructures have been studied by using transmission electron microscopy, photoluminescence, and Shubnikov–de Haas (SdH) measurements. In the sample of δ<0.01%, two SdH oscillations beat each other due to the population of the lowest two subbands. The carrier concentrations of these two subbands are 1.398 and 1.248×10[sup 13] cm[sup -2] and the electric field at the interface is reduced to 2.19×10[sup 4] V/cm, which is one order of magnitude smaller than that of Al[sub 0.35]Ga[sub 0.65]N/GaN heterostructure. We suggest that a small fraction of In atoms in the Al[sub 0.35-δ]In[sub δ]Ga[sub 0.65]N can be used as a tuning parameter to control the strain and the piezoelectric field at the interface. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2002
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