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Dual accumulation and depletion behaviors of the arsenic precipitation in low-temperature-grown Be delta-doped GaAs.
- Source :
-
Applied Physics Letters . 1/13/2003, Vol. 82 Issue 2, p305. 3p. 2 Diagrams. - Publication Year :
- 2003
-
Abstract
- The precipitation of arsenic in annealed Be delta-doped GaAs grown by low-temperature molecular-beam epitaxy has been studied using transmission electron microscopy. It was found that the planes doped with [Be] = 1.0 10[sup 14] cm[sup -2] always accumulate As precipitates, while the planes doped with [Be] = 1 × 10[sup 13] cm[sup -2] tend to deplete As precipitates. In contrast, the planes doped with [Be] = 3 and 2 × 10[sup 13] cm[sup -2] exhibit a weak accumulation property when annealed at 700 °C, but a depletion property when annealed 800 °C. The existence of twins and/or precipitates around the [Be]= 1.0 × 10[sup 14] cm[sup -2] doped planes found in the as-grown sample suggests a strain-induced mechanism to account for the As precipitates accumulation on these planes. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ARSENIC
*BERYLLIUM
*GALLIUM arsenide
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 82
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 8858590
- Full Text :
- https://doi.org/10.1063/1.1536248