Cite
Dual accumulation and depletion behaviors of the arsenic precipitation in low-temperature-grown Be delta-doped GaAs.
MLA
Huang, J. H., et al. “Dual Accumulation and Depletion Behaviors of the Arsenic Precipitation in Low-Temperature-Grown Be Delta-Doped GaAs.” Applied Physics Letters, vol. 82, no. 2, Jan. 2003, p. 305. EBSCOhost, https://doi.org/10.1063/1.1536248.
APA
Huang, J. H., Hsieh, L. Z., Guo, X. J., & Su, Y. O. (2003). Dual accumulation and depletion behaviors of the arsenic precipitation in low-temperature-grown Be delta-doped GaAs. Applied Physics Letters, 82(2), 305. https://doi.org/10.1063/1.1536248
Chicago
Huang, J. H., L. Z. Hsieh, X. J. Guo, and Y. O. Su. 2003. “Dual Accumulation and Depletion Behaviors of the Arsenic Precipitation in Low-Temperature-Grown Be Delta-Doped GaAs.” Applied Physics Letters 82 (2): 305. doi:10.1063/1.1536248.