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Piezoelectric effect on Al[sub 0.35-δ]In[sub δ]Ga[sub 0.65]N/GaN heterostructures.
- Source :
- Applied Physics Letters; 4/15/2002, Vol. 80 Issue 15, p2684, 3p, 1 Diagram, 3 Graphs
- Publication Year :
- 2002
-
Abstract
- Al[sub 0.35-δ]In[sub δ]Ga[sub 0.65]N/GaN heterostructures have been studied by using transmission electron microscopy, photoluminescence, and Shubnikov–de Haas (SdH) measurements. In the sample of δ<0.01%, two SdH oscillations beat each other due to the population of the lowest two subbands. The carrier concentrations of these two subbands are 1.398 and 1.248×10[sup 13] cm[sup -2] and the electric field at the interface is reduced to 2.19×10[sup 4] V/cm, which is one order of magnitude smaller than that of Al[sub 0.35]Ga[sub 0.65]N/GaN heterostructure. We suggest that a small fraction of In atoms in the Al[sub 0.35-δ]In[sub δ]Ga[sub 0.65]N can be used as a tuning parameter to control the strain and the piezoelectric field at the interface. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- PIEZOELECTRICITY
HETEROSTRUCTURES
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 80
- Issue :
- 15
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 6483053
- Full Text :
- https://doi.org/10.1063/1.1469209