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Your search keyword '"Morteza Monavarian"' showing total 3 results
Start Over Author "Morteza Monavarian" Journal 2018 ieee international semiconductor laser conference (islc)
3 results on '"Morteza Monavarian"'

1. Nonpolar GaN-Based Superluminescent Diode with 2.5 GHz Modulation Bandwidth

Author

Andrew Aragon, Ashwin K. Rishinaramangalam, Saadat Mishkat Ul Masabih, Daniel F. Feezell, Arman Rashidi, Changmin Lee, Morteza Monavarian, and Steven P. DenBaars

Subjects
Fabrication, Materials science, business.industry, Bandwidth (signal processing), Gallium nitride, 02 engineering and technology, Superluminescent diode, Waveguide (optics), Modulation bandwidth, chemistry.chemical_compound, 020210 optoelectronics & photonics, chemistry, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Current density, Diode
Abstract

We report the fabrication and electro-optic characterization of nonpolar GaN-based superluminescent diodes with a tapered waveguide design. The devices were grown and fabricated on freestanding m-plane GaN. An electrical −3dB modulation bandwidth of 2.5 GHz is reported at the highest current density.

Published
2018

2. GHz-Bandwidth Nonpolar InGaN/GaN Micro-LED Operating at Low Current Density for Visible-Light Communication

Author

Arman Rashidi, Andrew Aragon, Ashwin K. Rishinaramangalam, Morteza Monavarian, and Daniel F. Feezell

Subjects
Materials science, business.industry, Bandwidth (signal processing), Visible light communication, 02 engineering and technology, Carrier lifetime, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, 010309 optics, law, 0103 physical sciences, Optoelectronics, Radio frequency, 0210 nano-technology, business, Current density, Electrical impedance, Light-emitting diode
Abstract

We demonstrate a high-speed nonpolar InGaN/GaN micro-LED with a record −3dB bandwidth of 1.5 GHz at a current density of 1 kA/cm2. The high-speed at low current density is attributed to the large electron-hole wavefunction overlap in nonpolar QWs leading to a shorter carrier lifetime.

Published
2018

3. Optically Pumped Polarization-Pinned GaN-Based Vertical-Cavity Surface-Emitting Lasers using Nanoporous Distributed Bragg Reflectors

Author

Saadat Mishkat-Ul-Masabih, Ting S. Luk, Morteza Monavarian, and Daniel F. Feezell

Subjects
Materials science, Nanoporous, business.industry, Optical polarization, Gallium nitride, Laser, Polarization (waves), law.invention, Optical pumping, chemistry.chemical_compound, chemistry, law, Optoelectronics, Stimulated emission, business, Power density
Abstract

Optically pumped nonpolar GaN-based vertical-cavity surface-emitting lasers (VCSELs) are demonstrated using nanoporous DBRs formed by electrochemical etching. Polarization-pinned single-mode stimulated emission is observed at 462 nm with a threshold power density of ∼5 kW/cm2 and a FWHM of ∼0.12 nm.

Published
2018

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