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Nonpolar GaN-Based Superluminescent Diode with 2.5 GHz Modulation Bandwidth

Authors :
Andrew Aragon
Ashwin K. Rishinaramangalam
Saadat Mishkat Ul Masabih
Daniel F. Feezell
Arman Rashidi
Changmin Lee
Morteza Monavarian
Steven P. DenBaars
Source :
2018 IEEE International Semiconductor Laser Conference (ISLC).
Publication Year :
2018
Publisher :
IEEE, 2018.

Abstract

We report the fabrication and electro-optic characterization of nonpolar GaN-based superluminescent diodes with a tapered waveguide design. The devices were grown and fabricated on freestanding m-plane GaN. An electrical −3dB modulation bandwidth of 2.5 GHz is reported at the highest current density.

Subjects

Subjects :
Fabrication
Materials science
business.industry
Bandwidth (signal processing)
Gallium nitride
02 engineering and technology
Superluminescent diode
Waveguide (optics)
Modulation bandwidth
chemistry.chemical_compound
020210 optoelectronics & photonics
chemistry
0202 electrical engineering, electronic engineering, information engineering
Optoelectronics
business
Current density
Diode

Details

Database :
OpenAIRE
Journal :
2018 IEEE International Semiconductor Laser Conference (ISLC)
Accession number :
edsair.doi...........9db498b3dd7ccb85f0a7371a5b81e36f

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