GHz-Bandwidth Nonpolar InGaN/GaN Micro-LED Operating at Low Current Density for Visible-Light Communication

Authors :: Arman Rashidi
Andrew Aragon
Ashwin K. Rishinaramangalam
Morteza Monavarian
Daniel F. Feezell
Source :: 2018 IEEE International Semiconductor Laser Conference (ISLC).
Publication Year :: 2018
Publisher :: IEEE, 2018.
Abstract: We demonstrate a high-speed nonpolar InGaN/GaN micro-LED with a record −3dB bandwidth of 1.5 GHz at a current density of 1 kA/cm2. The high-speed at low current density is attributed to the large electron-hole wavefunction overlap in nonpolar QWs leading to a shorter carrier lifetime.

Subjects :: Materials science
business.industry
Bandwidth (signal processing)
Visible light communication
02 engineering and technology
Carrier lifetime
021001 nanoscience & nanotechnology
01 natural sciences
law.invention
010309 optics
law
0103 physical sciences
Optoelectronics
Radio frequency
0210 nano-technology
business
Current density
Electrical impedance
Light-emitting diode

Tools