1. Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers
- Author
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Grieseler, Rolf, Gallino, Isabella, Duboiskaya, Natallia, Döll, Joachim, Shekhawat, Deepshikha, Reiprich, Johannes, Guerra, Jorge A., Hopfeld, Marcus, Honig, Hauke L., Schaaf, Peter, and Pezoldt, J.
- Abstract
An alternative low thermal budget silicon carbide syntheses route is presented. The method is based on self-propagating high-temperature synthesis of binary silicon-carbon-based reactive multilayers. With this technique, it is possible to obtain cubic polycrystalline silicon carbide at relatively low annealing temperatures by a solid state reaction. The reaction starts above 600 °C. The transformation process proceeds in a four-step process. The reaction enthalpy was determined to be (-70 ± 4) kJ/mol.
- Published
- 2022
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