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5 results on '"Taur,Y."'

1. A review of the Z²-FET 1T-DRAM memory: operation mechanisms and key parameters

Author

Cristoloveanu, S., Lee, K.H., Parihar, M.S., El Dirani, H., Lacord, J., Martinie, S., Le Royer, C., Barbe, J.-Ch., Mescot, X., Fonteneau, P., Galy, Ph., Gamiz, F., Navarro, C., Cheng, B., Duan, M., Adamu-Lema, F., Asenov, A., Taur, Y., Xu, Y., Kim, Y-T., Wan, J., and Bawedin, M.

Subjects
Hardware_MEMORYSTRUCTURES, Hardware_INTEGRATEDCIRCUITS
Abstract

The band-modulation and sharp-switching mechanisms in Z²-FET device operated as a capacitorless 1T-DRAM memory are reviewed. The main parameters that govern the memory performance are discussed based on detailed experiments and simulations. This 1T-DRAM memory does not suffer from super-coupling effect and can be integrated in sub-10 nm thick SOI films. It offers low leakage current, high current margin, long retention, low operating voltage especially for programming, and high speed. The Z²-FET is suitable for embedded memory applications.

Published
2018

2. Z²-FET DC hysteresis: deep understanding and preliminary model

Author

Lacord, J., Martinie, S., Parihar, M.-S, Lee, K, Bawedin, M, Cristoloveanu, S, Taur, Y, Barbé, J.-Ch, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), University of California [San Diego] (UC San Diego), University of California, European Project: 687931,H2020,H2020-ICT-2015,REMINDER(2016), and University of California (UC)

Subjects
[SPI]Engineering Sciences [physics], TCAD, Z²-FET, compact model, DC operation, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 1T-DRAM
Abstract

International audience; Z²-FET, a partially gated diode, was explored for ESD application due to its sharp switching behavior [1,2]. 1T-DRAM application of Z²-FET has recently been evidenced [3,4] leading to an even stronger interest for this device. However, a deep explanation of physical phenomena involved in Z²-FET operation has not been proposed yet. In this paper, we provide a detailed description of the Z²-FET DC behavior based on TCAD simulations and propose corresponding analytical modeling.

Published
2017

3. Role of intestinal microbiota in transplantation outcomes

Author

Taur Y, Jenq RR, Ubeda C, van den Brink M, and Pamer EG

Abstract

While allogeneic hematopoietic stem cell transplantations have a curative potential, infections and graft-versus-host disease remain significant problems. The intestinal microbiota can influence responses to cancer chemotherapy and the role of the microbiota in affecting allogeneic hematopoietic stem cell transplantation outcomes is increasingly appreciated. The following paper discusses the most recent developments in this area. (C) 2015 Elsevier Ltd. All rights reserved.

Published
2015

5. Technology Development & Design for 22 nm InGaAs/InP-channel MOSFETs

Author

Rodwell, M. J. W., Wistey, M., Singisetti, U., Burek, G., Gossard, A., Stemmer, S., Engel-Herbert, R., Hwang, Y., Zheng, Y., Walle, C., Palmstrom, C., Arkun, E., Simmonds, P., Asbeck, P., Taur, Y., Kummel, A., Yu, B., Wang, D., Yuan, Y., Mcintyre, P., Harris, J., Massimo Fischetti, Sachs, C., and Ieee

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