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Technology Development & Design for 22 nm InGaAs/InP-channel MOSFETs
- Authors :
- Rodwell, M. J. W.
Wistey, M.
Singisetti, U.
Burek, G.
Gossard, A.
Stemmer, S.
Engel-Herbert, R.
Hwang, Y.
Zheng, Y.
Walle, C.
Palmstrom, C.
Arkun, E.
Simmonds, P.
Asbeck, P.
Taur, Y.
Kummel, A.
Yu, B.
Wang, D.
Yuan, Y.
Mcintyre, P.
Harris, J.
Massimo Fischetti
Sachs, C.
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- Source :
- ResearcherID
Details
- Database :
- OpenAIRE
- Journal :
- ResearcherID
- Accession number :
- edsair.dedup.wf.001..2d52a4541eb26b88546f314dcf663498