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Objective The transcricothyroid (CT) membrane approach is a good option for office-based vocal fold injection (VFI). However, because the needle tip is invisible during injection using the CT approach, precise localization requires a high level of experience, and mastering this approach involves a steep learning curve. To overcome current limitations, we conceptualized a novel technique: real-time light-guided VFI (RL-VFI), which enables simultaneous VFI under direct visualization of the lighted needle tip. Herein, we aimed to verify the feasibility of RL-VFI in cadaveric canine model, simulating the setting of office-based VFI, as well as to explore its clinical usefulness. Study design Animal study. Methods A customized prototype device was developed. It consisted of three parts: light source, controller, and injector. Light source comprised laser diodes of two wavelengths (635 nanometers [nm], red; 532 nm, green). Four types of injector were developed using 40-mm needles of 23- and 25-gauge and optic fibers of 50 and 100 μm. ex vivo canine larynx was prepared for the experiment. Flexible laryngoscopy system was used to examine canine vocal folds. Results Various routes from three insertion points (3 mm, 10 mm, and 17 mm from the midline) were validated using the device. Regardless of the injection routes, the location of the needle tip was accurately indicated by light. RL-VFI was feasible under light guidance without difficulties. Moreover, precise and simultaneous re-injection could be performed at the intended point using the device. Conclusion We introduced RL-VFI using our customized prototype device in an ex vivo canine larynx, simulating the setting of office-based VFI. Clinical application of RL-VFI will improve safety and precision of CT approach, as well as expand its applications in laryngology. Level of evidence NA. Laryngoscope, 129:935-942, 2019.

Summary A hallmark of Parkinson's disease (PD) is the preferential loss of substantia nigra dopamine neurons. Here, we identify a new par kin i nteracting s ubstrate, PARIS (ZNF746), whose levels are regulated by the ubiquitin proteasome system via binding to and ubiquitination by the E3 ubiquitin ligase, parkin. PARIS is a KRAB and zinc finger protein that accumulates in models of parkin inactivation and in human PD brain. PARIS represses the expression of the transcriptional coactivator, PGC-1α and the PGC-1α target gene, NRF-1 by binding to insulin response sequences in the PGC-1α promoter. Conditional knockout of parkin in adult animals leads to progressive loss of dopamine (DA) neurons in a PARIS-dependent manner. Moreover, overexpression of PARIS leads to the selective loss of DA neurons in the substantia nigra, and this is reversed by either parkin or PGC-1α coexpression. The identification of PARIS provides a molecular mechanism for neurodegeneration due to parkin inactivation. PaperClip

In this paper, we describe our fabrication of a solution-processed organic thin-film transistor (OTFT) with 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) as the organic semiconductor (OSC) and methyl-siloxane-based spin-on glass (SOG) as the inorganic gate dielectric. Also, we compare these results with OTFTs using different substrates such as a silicon wafer or a polyethersulfone (PES) substrate. From electrical measurements, we observed exemplary I – V characteristics for these TFTs. We calculated the field effect mobility to be 0.007 cm 2 /V s for an OTFT fabricated on a wafer and 0.004 cm 2 /V s for an OTFT fabricated on a PES substrate.

In this study, we have developed high performance TFT (thin film transistor) and a 7.4-inch high resolution LCD (liquid crystal display) panel of full color WSXGA (1600 × RGB × 1024, 257 ppi, 43% aperture ratio) format using ‘sequential lateral solidification (SLS)’ laser crystallization process [Y.J. Kim et al., Grain boundary effect on the characteristics of the high-performance poly-Si TFTs crystallized by SLS Technique, AM-LCD (2005) 249–251]. The gate and data driver circuits were integrated on panel and the integrated drivers comprise a sequential analog sampling data driver and a dual logic gate scanner for redundancy. In addition, we have improved key process for fine image quality. Metal lines used Cu/MoX (5000 A/300 A) for uniform data transfer and array on BM (black matrix) structure for lager aperture ratio was adopted.

We present the latest results of the use of soluble materials such as organic semiconductors (OSCs) or gate-dielectrics for simplified processing of organic thin-film transistors (OTFTs). In this paper, we described our fabrication of a solution-processed OTFT with 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the OSC and siloxane-based spin-on glass (SOG) as the inorganic gate-dielectric. Also, synthesized TIPS-pentacene and SOG were examined for use as the OSC and gate-dielectric in an OTFT. From electrical measurements, we obtained device performance characteristics such as charge carrier mobility, threshold voltage, current ON/OFF ratio, and subthreshold swing, which were 6.48 times 10-3 cm2/V ldr s, -13 V, ~100, and 1.83 V/dec, respectively.

To integrate solution-processible organic semiconductors in the array of thin-film transistors, fine-patterned organic thin-film transistors were fabricated by photolithography. Gold, which has a high work function, was used as a source–drain electrode to reduce the energy barrier between the organic semiconductor and the source–drain. Stacked double layers of gold and chromium were deposited and etched on a glass substrate to enhance the poor adhesion of gold on glass, and then a self-assembled monolayer was formed on them. Solutions of an organic semiconductor and a low-k organic gate insulator were spun by a spin coater and patterned by dry etching using a gate metal as a mask. The devices fabricated by this method show good electrical properties, average field effect mobilities of 0.2–0.3 cm2 V-1 s-1, and an on/off current ratio of over 105 in device dimensions of W/L=84/6 µm. The leakage current through the gate insulator between the gate and the source–drain was similar to that of SiNx in amorphous silicon thin-film transistor (a-Si TFT), which is lower than 10 pA. When the bias-stress stability of organic thin film transistors (OTFTs) was compared with that of a-Si TFT, the threshold voltage shift of OTFT was comparable to that of a-Si TFT, which is smaller than 1 V. However, the stability of OTFT should be further improved and discussed.

By the integrated drive circuitry with laser crystallization process, the gate and data driver circuits required for full color WVGA(800 × RGB × 480) LCD are integrated on panel. The integrated driver comprises a sequential analog sampling data driver and a dual logic gate scanner for redundancy. The characteristics and uniformities of the LTPS (low temperature polycrystalline silicon) devices have been remarkably enhanced by applying stacked SiO2 and SiNx buffer layers and surface treatment.

Flows in a ramjet inlet is simulated for the study of the rocket-ramjet transition. The flow is unsteady, two-dimensional axisymmetric, compressible and turbulent. Double time marching method is used for the unsteady calculation and HLLC method is used as a higher order MUSCL method. As for turbulent calculation, k — ω SST model is used for more accurate viscous calculations. Sinusoidal pressure perturbation is given at the exit and the flow fields at the inlet is studied. The cruise condition as well as the ground test condition are considered. The pressure level for the ground test condition is relatively low and the effect of the pressure perturbation at the combustion chamber is small. The normal shock at the cruise condition is very sensitive to the pressure perturbation and can be easily detached from the cowl when the exit pressure is relatively high. The sudden decrease in the mass flux is observed when the inlet flow becomes subcriticai, which can make the inlet incapable. The amplitude of travelling pressure waves becomes larger as the downstream pressure increases, and the wavelength becomes shorter as Mach number increases. The phase difference of the travelling perturbed pressure wave in space is 180 degree.

By the SOP (system-on-panel) technology with laser crystallization process, all the driver circuits required for 6-bit color QVGA (320 × RGB × 240) LCD are integrated on panel. The integrated data driver comprises a new ramp-driven 6-bit DAC. The characteristics and uniformity of the LTPS (low temperature polycrystalline silicon) has been remarkably enhanced by applying multi-shot ELA (excimer laser annealing) process and surface treatment. The characteristics of the poly-Si TFTs for integration of driver circuits are following: (1) in NMOS, V th ∼ 1 V and mobility ∼ 240 cm 2 /V s, (2) in PMOS, V th ∼ −1.8 V and mobility ∼ 100 cm 2 /V s.

The authors report the fabrication of solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a cross-linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) substrate. The device exhibited useful electrical characteristics, including a saturation field effect mobility of 2.08 × 10−2 cm2 V−1 s−1, a current on/off ratio of 105, a threshold voltage of −2 V and an excellent subthreshold slope of 0.86 V/dec. It was demonstrated that the significant improvement in the subthreshold slope of TIPS-pentacene TFTs could be attributed to a decreased carrier trap density at the PVP/TIPS-pentacene film interface. Furthermore, a 1,2,3,4-tetrahydronaphthalene (Tetralin) solvent used in this study had a high boiling point, which had a positive effect on the morphology and the molecular ordering of the TIPS-pentacene film.

End substitution of sexithiophene with hexyl groups, α,ω-dihexylsexithiophene (DH-6T), leads to a highly soluble conjugated oligomer. In this paper, we report on the synthesis of an air-stable p-type organic semiconductor, DH-6T. We also report on our analysis of its thermal, optical, and electrical properties. We obtained a stable characteristic curve. The field-effect performance had a mobility of 3.29×10−4cm2∕Vs, while the threshold voltage was about −19V. The current on/off ratio was greater than 106 when the gate voltage was scanned from −40to0V.

— A 42-in. 2-D/3-D switchable display operating in a parallax-barrier-type system consisting of liquid-crystal displays (LCDs) has been developed. The system displays 2-D images in full resolution, without any degradation to the original 2-D images, and 3-D autostereoscopic images with resolutions higher than SVGA with wide viewing zones electrically controlled by the parallax-barrier system. The system is intended for use in public-information displays (PIDs), a booming field, and as displays for gaming, medical, and simulation applications.

Simple p-channel poly-Si TFT (Thin Film Transistor) structure (PMOS 4mask structure) for AMLCD (active matrix liquid crystal display) was developed. Compared with a conventional PMOS 6mask process, two photo mask steps, passivation-hole mask and pixel mask, has been eliminated to create 4mask process. Both ELA (Eximer Laser Annealing) and SLS (Sequential Lateral Solidification) method were used for the formation of a poly-Si. By using PMOS 4mask process, 10.4-inch XGA (1024×768) AMLCD panel with integration of the gate-driver and demultiplexer was successfully realized.

DC stress induced degradation was compared between LTPS short channel LDD NMOSFETs and PMOSFETs with a dimension of W/L = 3/3 μm/μm by degradation mapping of device parameters. Asymmetric degradation phenomena were classified for different type of devices and compared with respect to applied bias and power.

High-quality thin films were deposited by charged liquid cluster beam (CLCB) method using a strontium carboxylate with a sol-gel processed Ti precursor at substrate temperatures of 400 and 500°C. The film deposited at 400°C was crystallized at 600-700°C to give a granular structure (film I) while the film deposited at 500°C (film II) gave a columnar structure of high crystallinity without postannealing. The grain growth and electric properties, such as dielectric constant, dissipation factor, leakage current density, and breakdown field, of films I and II were compared. © 2004 The Electrochemical Society. All rights reserved.

High-quality barium strontium titanate (BST) thin films were fabricated using charged liquid cluster beam (CLCB) method. The X-ray diffraction patterns of the as-deposited BST films indicated that the perovskite phase appeared at 450°C without any intermediate phase and high film crystallinity was achieved at 500°C. The Ba:Sr:Ti ratio in the precursor solution was transferred to the deposited film without any loss. The crystallinity, dielectric constant, dissipation factor, and leakage current density were measured and compared for the as-deposited films prepared at 500°C and the films deposited at 400°C and postannealed at 700°C.