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61 results on '"Arteev IS"'

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1. A New Schism: Church Diplomacy and the Ukrainian Crisis

2. The Historical Heritage оf Portugal as a Factor of Division and Consolidation оf Society

3. AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

4. The New Populism in New Europe: Hungarian and Polish Examples in the Scientific Discourse

5. COVID-Subsidiarity as A New Political Phenomenon

8. Cagelike Rb2-, K2-, and Na2-Tetracopper(II) Silsesquioxanes with Quaternary Ammonium Cations: Synthesis, Structures, and Catalytic Activity

9. Cagelike Octacopper Methylsilsesquioxanes: Self-Assembly in the Focus of Alkaline Metal Ion Influence—Synthesis, Structure, and Catalytic Activity

10. Многослойные AlGaN/GaN гетероструктуры с низким слоевым сопротивлением на основе двумерного электронного газа

11. Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure

14. Promising Approaches in International Conflict Studies: Communication Perspective

15. Foreign Policy of Russia: ‘Soft Power’ of the Regions

16. 'A Disunited Kingdom': the Muslim Diaspora of Great Britain in Scientific Discussion

18. Optimization of InGaN-based luminescent heterostructures by genetic algorithm

19. Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells

20. International Connections of Russian Regions and the Centre’s Position: Evolution of Coordination

23. Sub-State Actors in International Relations and the Evolution of Federalism (Cooperation between the Komi Republic and Hungary in the First Half of the 1990s.)

24. Determination of hole diffusion length in n-GaN

25. Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

26. Localized-state ensemble model analysis of InGaN/GaN quantum well structures with different dislocation densities

28. Terahertz Emission due to Radiative Decay of Hot 2D Plasmons in AlGaN/GaN Heterojunction

29. Temperature-dependent luminescent properties of dual-wavelength InGaN LEDs

30. InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications

31. THE THIRD LEVEL OF INTERNATIONAL RELATIONS: CHARACTERISTICS OF SUB-STATE ACTORS

32. The Issues of the Diocesan Organization of the Breton Сhurch in the 9th Century

33. Third Level of International Relations: Characteristics of Sub-State Actors

34. Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors

35. Emission spectrum control in monolithic blue-cyan dichromatic light-emitting diodes

36. 2D electrons and 2D plasmons in AlGaN/GaN nanostructure under highly non-equilibrium conditions

37. III-N heterostructures for monolithic integration of enhancement/depletion-mode high-electron-mobility transistors

38. Carrier Redistribution in Blue-Cyan InGaN Dichromatic Light-Emitting Diodes

40. Development of digital technologies for designing of heat supply systems

41. Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

42. Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation

44. Synchronous extraction of microwave energy from cavities through a packet of interference switches

45. Investigation of Statistical Broadening in InGaN Alloys

47. Resonant Bragg structures with GaN/AlGaN Quantum Wells

48. Luminescence peculiarities of InGaN/GaN dichromatic LEDs

49. Tracking the presence of users by the presence of their device

50. Laser synchronization of resonant microwave compressors

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