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Influence of doping profile of GaN: Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors
- Publication Year :
- 2020
Details
- Database :
- OpenAIRE
- Accession number :
- edsair.doi...........84a73795cc1685e225838dffc45c2535
- Full Text :
- https://doi.org/10.13140/rg.2.2.32325.17120