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In a wavelength division multiplexed fiber system, where pulses on different wavelength beams may co-propagate in a single mode fiber, the cross-phase-modulation (CPM) effects caused by the nonlinearity of the optical fiber are unavoidable. In other words, pulses on different wavelength beams can interact with and affect each other through the intensity dependence of the refractive index of the fiber. Although CPM will not cause energy to be exchanged among the beams, the pulse shapes and locations on these beams can be altered significantly. This phenomenon makes possible the manipulation and control of pulses co-propagating on different wavelength beams through the introduction of a shepherd pulse at a separate wavelength. How this can be accomplished is demonstrated in this paper.

In this paper, calculations of the hole initiated interband impact ionization rate in bulk silicon and GaAs are presented based on an ensemble Monte Carlo simulation with the inclusion of a wave-vector-dependent numerical transition rate formulation. The ionization transition rate is determined for each of the three valence bands, heavy, light, and split-off, using Fermi's golden rule with a two-body, screened Coulomb interaction. The dielectric function used within the calculation is assumed to be wave-vector-dependent. Calculations of the field-dependent impact ionization rate as well as the quantum yield are presented. It is found from both the quantum yield results and examination of the hole distribution function that the effective threshold energy for hole initiated impact ionization is relatively soft, similar to that predicted for the corresponding electron initiated ionization events occur more frequently than either heavy or split-offf initiated ionization events in bulk silicon over the applied electric field strengths examined here, 250-500 kV/cm. Conversely,in GaAs, the vast majority of hole initated ionization events originate from holes within the split-off band.

The paper describes the processing and electrical transport measurements for achieving reproducible high-Tc and high-Jc sputtered TlCaBaCuO thin films on LaAlO3 substrates, for microelectronic applications. The microwave properties of TlCaBaCuO thin films were investigated by designing, fabricating, and characterizing microstrip ring resonators with a fundamental resonance frequency of 12 GHz on 10-mil-thick LaAlO3 substrates. Typical unloaded quality factors for a ring resonator with a superconducting ground plane of 0.3 micron-thickness and a gold ground plane of 1-micron-thickness were above 1500 at 65 K. Typical values of penetration depth at 0 K in the TlCaBaCuO thin films were between 7000 and 8000 A.

In most theoretical and experimental investigations into the shock response of underdense solid media, the influence of the medium's mesostructure on the resulting pressure and degree of compaction has not been taken into account. In typical cases examined, shock pressures are well in excess of 1 GPa and this approach is clearly justified. However, at low pressures, calculations show that the distribution of void sizes can affect the final state achieved upon shocking the medium from a given initial porosity. This paper analyzes the response of porous aluminum to low pressure shocking and demonstrates a dependence of the final shocked state on the distribution of void sizes.

The paper describes thin films deposited in a system where substrates are scanned over areas up to 3.5 x 3.5 cm through the stationary plume of an ablated material defined by an aperture. These YBCO films are deposited on LaAlO3 and SrTiO3 substrates with the thickness of 90 and 160 nm. Attention is focused on the main features of the deposition system: line focusing of the laser beam on the target; an aperture defining the area of the plume; computerized stepper motor-driven X-Y stage translating the heated sampler holder behind the plume-defining aperture in programmed patterns; and substrate mounting block with uniform heating at high temperatures over large areas. It is noted that the high degree of uniformity of the properties in each film batch illustrates that the technique of pulsed laser deposition can be applied to produce large YBCO films of high quality.

In order to calibrate a time-of-flight mass spectrometer which is to be flown in the solar wind, the charge exchange properties of low-energy ions in thin carbon foils have been investigated. Incident ions of He, C, N, O, Ne, and Ar with energies in the range 0.5-2 keV/nucleon have been used to measure charge-state distribution, residual energy, and angular distribution after transmission through thin (1-6 microgram/sq cm) carbon foils. Within such foils, an equilibrium between ionization and recombination of the projectile is rapidly established, and, consequently, the charge state of the emerging particle depends essentially on its residual velocity. A comparison of the charge exchange properties of Ne-22 with Ne-20 demonstrates that indeed the velocity (and not the energy) of the emerging particle determines its final charge. A comparison of properties of different elements provides an indication of an electron shell effect. Predictions for the energy loss of ions within the carbon foils made with the TRIM code are in good agreement with the experimental results presented in this paper.

This paper reports on a tungsten-oxide-based, nonvolatile, electrically reprogrammable, variable resistance device as an analog synaptic memory connection for electronic neural networks. A voltage controlled, reversible injection of H(+) ions in electrochromic thin films of WO3 is utilized to modulate its resistance. A hygroscopic thin film of Cr2O3 is the source of H(+) ions. The resistance of the device can be tailored and stabilized over a wide dynamic range (about 4 orders of magnitude), and the programming speed is modulated by the control voltage. The suitability of such a device in terms of its response speed, reversibility, stability, and cyclability for its use in electronic neural networks is discussed.

This paper describes growth of (Al/x/Ga/1-x)0.51In0.49P layers (with x from 0 to 1) lattice-matched to (001)-oriented GaAs substrates by atmospheric-pressure OMVPE, using trimethylindium, trimethylaluminum, and trimethylgallium and PH3 as source materials in a horizontal reactor. Excellent surface morphologies were obtained over the entire range of Al compositions at a growth temperature of 680 C. Photoluminescence (PL) was observed for all samples with x values not below 0.52, with PL peak energies as high as 2.212 eV. The PL FWHM for Ga(0.51)In(0.49)P was 7.2 meV at 10 K and 35 meV at 300 K. At 10 K, the PL intensity was nearly a constant over the composition range from x = 0 to 0.52.

This paper describes the current development of a noncryogenic gravity gradiometer for future use on board the tethered satellite system (TSS). The paper also proposes a way of testing a single-axis prototype of such an instrument that makes use of the free-fall technique in vacuum. This gravity gradiometer has a design sensitivity of the order of 0.01 EU in 10-s integration time. Because of the small size and light weight, a noncryogenic gravity gradiometer is a valid candidate to fit the limited accommodation capability of the TSS deployed from the Shuttle and maintained, for several days, at an altitude of 120-130 km. This unique capability improves the resolution and accuracy achievable in reconstructing the earth gravity field, in particular at short wavelengths. A preliminary analysis of the dynamics of the TSS satellite indicates the potential of such satellite as a low-altitude research platform for gravity gradiometry.

This paper reports an in situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) from a 10-nm-thick amorphous mixture of Co and Si in the ratio 1:2, which was formed by codeposition of Co and Si near room temperature. Nuclei of CoSi2 are observed in the as-deposited film. These nuclei are epitaxial and extend through the whole film thickness. Upon annealing, these columnar epitaxial CoSi2 grains grow laterally at temperatures as low as 50 C. The kinetics of this lateral epitaxial growth was studied at temperatures between 50 and 150 C. The activation energy of the growth process is 0.8 + or - 0.1 eV.

The coherency-incoherency transition in epitaxial crystals is said to take place at a critical misfit f(c) or, for a system in which a monolayer is subcritical, at a critical thickness h(c). In this paper, the physical principles and models used to predict critical parameters are analyzed and put into perspective. The dependence of the relevant principles on the equilibrium-nonequilibrium conditions under which the quantities are measured in practice is stressed. The advantages and disadvantages of the models used (essentially the Frenkel-Kontorowa and Volterra models) are highlighted.

This paper reports on the magnetic field dependence of the transport critical current and dc magnetic susceptibility measurements on YBa2Cu3O(7-x) superconductors formed by melt-solid reactions at 950 C between Ba-Cu-O (or Tb-Ba-cu-O) and solid nonstoichiometric Y-Ba-Cu oxide. Four-probe dc critical current measurements at 77, 64, and 4.2 K show strong depression of the critical current density with increasing magnetic field, in agreement with a model of weakly linked superconducting regions. Diamagnetic shielding and Meissner flux expulsion measurements in the temperature range 10-300 K show about one-third volume fraction of perfect superconductivity. Both shielding and flux expulsion were observed to be approximately temperature independent below 60 K, indicating strong coupling between the grains throughout the entire volume below this temperature.

This paper presents a derivation of an exact closed-form expression of the integral chord-length distribution for the calculation of single-event upsets (SEUs) in an electronic memory cell, caused by cosmic rays. Results computed for two rectangular parallelepipeds using this exact expression are compared with those computed with Bradford's (1979) semiexact expression of C(x). It is found that the values of C(x) are identical for x equal or smaller than b but are vastly different for x greater than b. Moreover, while C(x) of Bradford gives reasonably accurate values of SEU rate for certain sets of computational parameters, it gives values more than 10 times larger than the correct values for other sets of parameters.

This paper reports on the successful application of variable-angle spectroscopic ellipsometry to quantitative thin-film hermeticity evaluation. It is shown that, under a variety of film preparations and moisture introduction conditions, water penetrates only a very thin diamondlike carbon (DLC) top surface-roughness region. Thus, DLC is an excellent candidate for use as protective coatings in adverse chemical and aqueous environments.

This paper theoretically investigates the nature of electronic transport and the high-energy tails of the electron distribution functions in bulk ZnSe and ZnS as a function of the applied electric field were investigated using calculations based on an ensemble Monte Carlo model. The calculations include the full details of the first two conduction bands as well as the full-order treatment of the electron-phonon scattering mechanisms. Results of high-field electronic transport calculations show that the electron energy distribution function is significanty cooler in ZnS than in ZnSe at comparable electric field strengths. The cooler distribution in ZnS is due to the much greater electron scattering rate. Consequently, it is more difficult to achieve carrier heating to comparable energies in ZnS than in ZnSe.

This paper demonstrates the use of resonant-tunneling diodes as varistors for harmonic multiplication. It is shown that efficient odd-harmonic conversion is possible and that even harmonics do not appear because of the antisymmetry of the current-voltage (I-V) curve. It is also shown that, with the proper choice of resonant-tunneling structure and pump amplitude, most of the harmonic output power can be confined to a single odd-harmonic frequency. Fifth-harmonic multiplication was demonstrated with an output at 21.75 GHz and a power conversion efficiency of 0.5 percent, and a fifth-harmonic efficiency of 2.7 percent was achieved in a circuit simulation using an improved I-V curve.

Particulate radiation in space is a principal source of silicon solar cell degradation, and an investigation of cell radiation damage at higher base resistivities appears to have implication toward increasing solar cell and, therefore, useful satellite lifetimes in the space environment. However, contrary to expectations, it has been found that for cells with resistivities of 84 and 1250 ohm cm, the radiation resistance decreases as cell base resistivity increases. An analytical solar-cell computer model was developed with the objective to determine the reasons for this unexpected behavior. The present paper has the aim to describe the analytical model and its use in interpreting the behavior, under irradiation, of high-resistivity solar cells. Attention is given to boundary conditions at the space-charge region edges, cell currents, cell voltages, the generation of the theoretical I-V characteristic, experimental results, and computer calculations.

Plasma-grown GaAs oxides and their interfaces have been characterized by measuring the electrical properties of metal-oxide-semiconductor capacitors and of Schottky junctions. The current transport mechanism in the oxide at high electrical field was found to be Frankel-Poole emission, with an electron trap center at 0.47 eV below the conduction band of the oxide. The interface-state density, evaluated from capacitance and conductance measurements, exhibits a U-shaped interface-state continuum extending over the entire band gap. Two discrete deep states with high concentration are superimposed on this continuum at 0.40 and 0.70 eV below the conduction band. The results obtained from measurements on Schottky junctions have excluded the possibility that these two deep states originate from plasma damage. Possible origins of these states are discussed in this paper.

Recently it has been pointed out that the saturation current of a semiconductor filament which constitutes part of a p-n junction diverges when the surface recombination velocity at the faces become infinitely large. Here it is pointed out that this is to be expected on physical grounds since, whenever the carrier concentration is kept off equilibrium by an outside agent, and at the same time recombination lifetimes in the bulk or in surface layers tend to zero, concentration gradients tend to infinity. As also previously noted, the situation can be remedied by using realistic (finite) surface recombination velocities in model calculations. However, this procedure leads to mathematical complexities which have been circumvented recently by the introduction of a heuristic approach. It is the aim of this paper to assess the validity of the heuristic approach by means of detailed and exact calculations.

This paper deals with the nonlinear quasi-fracture behavior of polymers. Using the finite element method, the quasi-fracture model composed of an isolated craze opening with a nonlinear boundary envelope forces represented by oriented fibril domains is analyzed in simply-stressed rectangular plate. The stress distribution, the displacement profile, as well as the yield or plastic or flow zone adjacent to the craze tips are obtained. It is found that the variation of the stress distribution near the craze tip is not as sharp as that for an elastic crack. The initial load required for yielding or flowing is greater for the quasifracture as compared with that for a classical fracture. Under the same load the yield or flow zone is somewhat smaller as compared with that obtained on the basis of linear elastic-plastic fracture mechanics theory.

This paper examines bipolar junction transistor models suitable for calculating the effects of large excursions of some of the variables determining the operation of a transistor. Both the Ebers-Moll and Gummel-Poon models are studied, and the junction and diffusion capacitances are evaluated on the basis of the latter model. The most interesting result of this analysis is that a bipolar junction transistor when struck by a cosmic particle may cause a single event upset in an electronic circuit if the transistor is operated at a low forward base-emitter bias.

In this paper the short circuit current Isc induced by the electron beam of a scanning electron microscope in a back surface field solar cell will be determined theoretically. It will be shown that, in a configuration used previously for solar cells with an ohmic back surface, the Isc gives a convenient means for estimating the back surface recombination velocities and thus the quality of back surface field cells. Numerical data will be presented applicable to a point source model for the electron-hole pair generation.

This paper presents a method utilizing the numerical plasma simulation particle-in-cell technique for studying electron accelerating probe characteristics. A probe configuration other than the commonly used plane, cylindrical, or spherical case will be studied; the probe configuration used is that of a disk. Cylindrical geometry is used in the simulation model. One of the advantages of a numerical simulation is the ease with which the details of the system can be examined. Therefore, in addition to the current-voltage characteristics of the static probe, other results are presented such as the time evolution of the plasma properties and studies of the sheath region surrounding the probe.

The paper describes the space-charge-limited beams produced by the plasma blowoffs generated by 20-MW bursts of 1.06-micron radiation from an active Q-switched Nd:YAG laser. Laser power densities near 10 to the 11th/sq cm on solid targets generate thermalized plasma plumes which drift to a 15-kV gridded extraction gap where the ions are extracted, accelerated, and electrostatically focused; the spatially defined ion beams are then magnetically analyzed to determine the charge state content in the beams formed from carbon, aluminum, copper, and lead targets. This technique preserves time-of-flight (TOF) information in the plasma drift region, which permits plasma ion temperatures and mass flow velocities to be determined from the Maxwellian ion curve TOF shapes for the individual charge species.

The methods of irreversible thermodynamics are used as a basis for developing a transport theory applicable to thermionic cesium diodes. This theory is applied in describing certain aspects of experimental voltage-current (V-I) characteristic curves of a thermionic diode. Emphasis is placed on the open-circuit voltage and short-circuit current of the V-I curves. Experimental results show that the open-circuit voltage is essentially independent of the interelectrode spacing, whereas the short-circuit current varies inversely with the interelectrode separation. The inverse dependence is in agreement with the results of the present analysis and also with results expected from diffusion theory, which has been used in other analyses. In fact, the theory used in this investigation reduces to diffusion theory under special assumptions. Deviations from diffusion theory, which were found in experimental results, can be accounted for using the theory developed in this paper.

The paper presents a general theory for the determination of the short circuit current generated by a sinusoidally amplitude-modulated electron beam in the presence of recombination centers with an arbitrary number of charge states. It is shown that a measurement of the coherent phase shift with respect to the incident beam as a function of the modulation frequency of the beam ascertains the magnitudes of electron and hole capture cross sections. The surface exposed to the electron beam must have a negligible surface recombination velocity for the measurements to be unambiguous.

The ionization balance in diffusion-dominated discharges may depend on both one- and two-step ionization processes. The Spenke diffusion equation describing such conditions is solved in this paper by the Rayleigh-Ritz variational method. Simple analytic approximations to the density profile, and the similarity relation between the equation parameter, and the discharge dimensions, are derived for planar and cylindrical geometry and compared with exact computations for certain limiting cases.

The paper presents calculations of electron impact collision strengths and spontaneous radiative decay rates for titanium ions of the LiI through FI isoelectronic sequences for transitions between levels of the 2S(2)2p(k), 2s2p(k+1), and 2p(k+2) configurations. From these atomic data, excitation-rate coefficients are calculated along with level populations for these three configurations. The calculations of level populations include the effects of proton excitation, and are carried out at electron temperatures and densities typical of tokamak plasmas. Wavelengths of forbidden and intersystem lines are given, and a synthetic spectrum is presented for a typical temperature and density.

In the present paper, the theory of parametric upconversion is extended to describe the mixing of two focused optical beams with unequal confocal parameters. The results obtained apply particularly well to the case where focusing of one input beam is limited to physical constraints, e.g., damage. The effects of phase matching, walk-off, and diffraction are examined.

The paper considers the spectroscopy and atomic physics for some highly ionized Cr, Fe, and Ni ions produced in tokamak plasmas. Forbidden and intersystem wavelengths for Cr and Ni ions are extrapolated and interpolated using the known wavelengths for Fe lines identified in solar-flare plasmas. Tables of transition probabilities for the B I, C I, N I, O I, and F I isoelectronic sequences are presented, and collision strengths and transition probabilities for Cr, Fe, and Ni ions of the Be I sequence are given. Similarities of tokamak and solar spectra are discussed, and it is shown how the atomic data presented may be used to determine ion abundances and electron densities in low-density plasmas.

The paper presents deep-level transient spectroscopy studies of Ni- and Zn-diffused vapor-phase epitaxy n-GaAs. Nickel diffused into VPE n-GaAs reduces the hole diffusion length L sub p from 4.3 to 1.1 microns. Deep-level transient spectroscopy was used to identify energy levels in Ni-diffused GaAs; the as-grown VPE GaAs contains traces of these levels and an electron trap. Ni diffusion reduces the concentration of this level by an amount that matches the increase in concentration of each of the two Ni-related levels. A technique for measuring minority-carrier capture cross sections was developed, which indicates that L sub p in Ni-diffused VPE n-GaAs is controlled by the E sub c - 0.39 eV defect level.

Pressures in excess of 1.4 Mbars have been attained by Ruoff and Wanagel (1977) by pressing tiny spherical diamond indentors (tip radius of 2 microns or less) against a diamond anvil. This system has been used for resistance-vs-pressure measurements as follows. A thin (200 A) coherent layer of a conductor, e.g., palladium, can be sputtered on the tip and on the anvil and electrical leads can then be attached to these at points remote from the contact area. Then a thin layer of the sample to be studied can be evaporated, sputtered, or placed on the anvil. When the indentor is pressed against the sample, the resistance changes as the pressure increases and as the contact radius increases. This paper analyzes the resistance-vs-pressure relationship for three different types of resistivity-vs-pressure behavior.

Charge-exchange-pumped Ca(+) was studied for possible positive laser gain at 370.6 and 315.9 nm using an Xe MPD arc as the Xe(+) source. The present paper describes the MPD arc, the calcium injection system, the diagnostics for gain, and spontaneous emission measurements and results. No positive gain measurements were observed. A small Xe-Ca charge exchange cross section compared to He-metal laser systems charge exchange cross sections is the most probable reason why the result was negative.

The paper presents polycrystalline X-ray diffraction data for three high-pressure phases of InSb. The study employed two types of diamond-anvil pressure cells. The X-ray diffraction parameters were recorded at different fixed pressures and temperatures on flat film. The experiment utilized Zr-filtered Mo radiation. The intensities were estimated from the X-ray photographs using a semiautomated microdensitometer.

The atomic structure of a screw dislocation core of the 110 line type in aluminum is calculated by the modified lattice-statics method developed in the preceding paper. The method includes anharmonic as well as harmonic forces and permits relaxation of the atoms in all three dimensions. All forces used in the present calculations were derived from a first-principles interatomic pair potential obtained via pseudopotential theory. Several significant differences from the ordinary lattice statics results are noted, including the displacement field, Peierl's energy barrier, and the equilibrium core-center location.

The paper describes in detail the properties of vapor-grown double-heterojunction lasers of Ga(As,P)/(In,Ga)P with room-temperature threshold current densities as low as 3400 A/sq cm at 7000 A and 6600 A/sq cm at 6800 A. These thresholds are three to eight times smaller than those of (Al,Ga)As lasers in this wavelength range due to the shorter-wavelength direct-indirect transition in Ga(As,P). The optical and electrical characteristics of the Ga(As,P)/(In,Ga)P lasers are found to be similar to those of (Al,Ga)As, with fundamental transverse-mode operation to 70 C, and spontaneous carrier lifetimes between 5 and 8 nsec typically observed at low current densities.

This paper presents an analysis of the bunching of an electron beam at optical wavelengths by means of the inverse Cerenkov effect. A laser light beam is used to modulate the velocity of the electrons, and this velocity modulation becomes charge-density modulation after an appropriate drift distance. The effects of energy and angular spread of the electrons are included, as well as the impact of scatterings in the index-matching medium. Bunching can occur with reasonable parameter values and the drift distance is of the order of several centimeters.

Calculations are presented in this paper which show the amount of power that can be expected to be deposited in He-3 for typical direct nuclear-pumped lasers presently in use. The calculations were performed taking into consideration the cylindrical geometry of the system, the depletion of the thermal flux across the tube cross section, and the energy loss of the protons to the cell walls. If a laser efficiency of 1% is assumed, the results indicate a steady-state laser output of 12.5 kW from a volume of 152.6 cu cm or 82 W/cu cm can be achieved.

The paper describes the modal dispersion characteristics of electromagnetic waves traveling along the azimuthally magnetized ferrite-loaded coaxial transmission line and the ferrite-loaded wire. The modal dispersion curves are used to determine the pass and stop bands of normal propagation. Boundary-value problems were solved with Bolle-Heller functions. The dispersion characteristics of transverse electric modes are presented as plots of the normalized propagation constant vs the normalized frequency.

The paper reports observation of doubly degenerate parametric amplification and oscillation at 36 GHz from a single point-contact Josephson junction. The experimental results agree qualitatively with theoretical calculations based on the resistively shunted junction model. The estimated noise temperature of an amplifier with 11 dB net gain is consistent with zero, but has an upper limit of 50 K. Attempts to observe parametric amplification in the singly degenerate mode with a pump frequency of 72 GHz were not successful.

The metal-semiconductor solar cell is a potential candidate for converting solar energy to electrical energy for space and terrestrial application. In this paper, a method for obtaining parameters of practical antireflection (AR) coatings for the metal-semiconductor solar cells is given. This method utilizes the measured equivalent index of refraction obtained from ellipsometry, since the surface to be AR coated has a multilayer structure. Both the experimental results and theoretical calculations of optical parameters for Ta2O5 AR coatings on Au-GaAs and Au-GaAs(0.78)P(0.22) solar cells are presented for comparison.

The advantages possible with the insertion of a thin-film insulating or semi-insulating layer between a metal and a semiconductor to form the MIS photovoltaic device have been presented previously in the literature. This MIS configuration may be considered as a specific example of a more general class of photovoltaic devices: electrode-thin-film-insulator-semiconductor devices. Since the advantages of the configuration were pointed out, there has been considerable experimental interest in these photovoltaic devices. Because the previous analysis showed that the introduction of the insulator layer could produce several different but advantageous effects, this paper presents a further outline giving a comparison of these effects together with their ramifications.