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Electrical-transport properties and microwave device performance of sputtered TlCaBaCuO superconducting thin films
- Source :
- Journal of Applied Physics. 72(6, Se)
- Publication Year :
- 1992
- Publisher :
- United States: NASA Center for Aerospace Information (CASI), 1992.
-
Abstract
- The paper describes the processing and electrical transport measurements for achieving reproducible high-Tc and high-Jc sputtered TlCaBaCuO thin films on LaAlO3 substrates, for microelectronic applications. The microwave properties of TlCaBaCuO thin films were investigated by designing, fabricating, and characterizing microstrip ring resonators with a fundamental resonance frequency of 12 GHz on 10-mil-thick LaAlO3 substrates. Typical unloaded quality factors for a ring resonator with a superconducting ground plane of 0.3 micron-thickness and a gold ground plane of 1-micron-thickness were above 1500 at 65 K. Typical values of penetration depth at 0 K in the TlCaBaCuO thin films were between 7000 and 8000 A.
- Subjects :
- Solid-State Physics
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 72
- Issue :
- 6, Se
- Database :
- NASA Technical Reports
- Journal :
- Journal of Applied Physics
- Publication Type :
- Report
- Accession number :
- edsnas.19920073975
- Document Type :
- Report
- Full Text :
- https://doi.org/10.1063/1.351583