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The vacancy-type defects in strained-Si layers deposited on Si(sub 0.75)Ge(sub 0.25)/graded-SiGe/Si structures were probed using monoenergetic positron beams. Based on the SIMS results, the observed behavior of the strained-Si Raman peak can be attributed to the incorporation of Ge into the strained-Si layer and the resultant relaxation of the Si-Si bonding.

Research describing the porous structure of silica based intermetal dielectric materials is presented. In particular the size and depth distributions of pores for different curing conditions and film thicknesses is investigated.

Vacancy-type defects due to carburization of Si by monoenergetic positrons are studied.

A new study investigates the annealing properties of defects in separation-by-implanted-oxygen wafers.

Monoenergetic positron beams were used to probe defects in p+ -gate metal-oxide-semiconductor structures.

The article discusses a new approach for enhancing the brightness of the high-intensity positron beam, which is usually produced by an electron linear accelerator (LINAC). The method is shown to be extremely simple, consisting of only few optics and is also able to produce very high-intensity positron microbeams.

Nanoporous polysiloxane films are fabricated by plasma polymerization of hexamethyldisiloxane mixed with cyclohexane under different conditions. Results suggest that not only film porosity but also average pore size depends on the amount of decomposable porogen.

Hydrogen-terminated vacancies in Si(super +) -implanted Si are studied by means of positron annihilation. Isochronal annealing experiments revealed a strong correlation between positron annihilation parameters and Raman intensities of Si-H, suggesting that hydrogen atoms are released from vacancy-type defects after annealing at 600 degree centigrade.

Vacancy-type defects in separation-by-implanted oxygen wafers were probed using monoenergetic positron beams. No large change in the value of S was observed before and after hydrogen annealing, because hydrogen annealing is performed in the wafer fabrication process.

The defects in BaTiO3/SrTiO3 structures fabricated are studied using MBE. The introduction of vacancy-type defects is found near the interface between the films and the substrate causing lattice relaxation in the BaTiO3 films.

The depth distributions of oxygen-related defects in separation-by-implanted oxygen wafers were determined. Oxygen related defects were presented in the superficial Si layer even after annealing at 1350 degree Celsius.

Crystallization of an amorphous layer in SiC introduced by ion implantation (P+) by monoenergetic positron beams is studied. Depth distributions and species of defects are determined from measurement of Doppler broadening spectra of annihilation radiation and lifetime spectra of positrons for 6H-SiC implanted with 200 keV P+ at a dose of 1x10 15cm-2.