Vacancy-type defects in strained-Si layers deposited on SiGe/Si structures probed by using monoenergetic positron beams

The vacancy-type defects in strained-Si layers deposited on Si(sub 0.75)Ge(sub 0.25)/graded-SiGe/Si structures were probed using monoenergetic positron beams. Based on the SIMS results, the observed behavior of the strained-Si Raman peak can be attributed to the incorporation of Ge into the strained-Si layer and the resultant relaxation of the Si-Si bonding.