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A study of vacancy-type defects introduced by the carburization of Si by monoenergetic positron beams
- Source :
- Journal of Applied Physics. April 1, 2001, Vol. 89 Issue 7, p3606, 5 p.
- Publication Year :
- 2001
-
Abstract
- Vacancy-type defects due to carburization of Si by monoenergetic positrons are studied.
- Subjects :
- Positrons -- Research
Silicon -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 89
- Issue :
- 7
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.75374353