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A detailed analysis of hot-carrier effects in deep submicron N and P channel SOI MOSFETs is presented, for gate lengths down to 0.1 mum. The two-stage time dependence of degradation is also investigated to provide reliable lifetime prediction methods that can be used under various hot-carrier stress conditions. Saturation levels are reliant on gate length, thus degradation time dependence needs to be carefully determined.

Hot carrier induced degradation is more complex in SOI devices than in bulk devices due to the thin Si-film effects. The reliability of SOI technologies are assessed, focusing on the hot-carrier effects (HCE) in deep submicron SIMOX and Unibond MOSFETs, hot carrier immunity of PD devices and analysis of the degradation N and P channel transistors. An investigation of the aging/recovery mechanisms for P-channel MOSFETs is also made.

Research was conducted to examine hot-carrier effects resulting from parasitic bipolar transistor action in deep submicron N-channel silicon-on-insulator metal oxide semiconductor field effect transistors for a range of temperature and gate length. Device aging was heavily influenced by variations in the leakage currents. Moreover, variations of threshold voltage shifts for a stress in off-state showed unusual behaviors.

The major advantages of the bipolar junction transistors (BJT's) are associated with its high speed functions and low noise characteristics. Research is conducted to study the noise characteristics of polysilicon bipolar transistor. Effects of varied chemical treatments and annealing temperatures on the noise magnitude of the BJT's, before and after polysilicon deposition are discussed.

A proposed generalized mobility law for drain current modeling in silicon metal oxide semiconductor transistors from room to liquid helium temperatures is presented. Results show that, for each temperature, there is a corresponding unique value of n which is highly accurate. The value also varies on a quasi-linear basis in intermediate temperature ranges, given the device technology used.