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Low-frequency noise sources in polysilicon emitter BJT's: influence of hot-electron-induced degradation and post-stress recovery
- Source :
- IEEE Transactions on Electron Devices. Sept, 1995, Vol. 42 Issue 9, p1647, 6 p.
- Publication Year :
- 1995
-
Abstract
- The major advantages of the bipolar junction transistors (BJT's) are associated with its high speed functions and low noise characteristics. Research is conducted to study the noise characteristics of polysilicon bipolar transistor. Effects of varied chemical treatments and annealing temperatures on the noise magnitude of the BJT's, before and after polysilicon deposition are discussed.
Details
- ISSN :
- 00189383
- Volume :
- 42
- Issue :
- 9
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.17972518