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Low-frequency noise sources in polysilicon emitter BJT's: influence of hot-electron-induced degradation and post-stress recovery

Authors :
Mounib, Ahmed
Balestra, Francis
Mathieu, Nathalie
Brini, Jean
Ghibaudo, Gerard
Chovet, Alain
Chantre, A.
Nouailhat, A.
Source :
IEEE Transactions on Electron Devices. Sept, 1995, Vol. 42 Issue 9, p1647, 6 p.
Publication Year :
1995

Abstract

The major advantages of the bipolar junction transistors (BJT's) are associated with its high speed functions and low noise characteristics. Research is conducted to study the noise characteristics of polysilicon bipolar transistor. Effects of varied chemical treatments and annealing temperatures on the noise magnitude of the BJT's, before and after polysilicon deposition are discussed.

Details

ISSN :
00189383
Volume :
42
Issue :
9
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.17972518