A thorough investigation of the degradation induced by hot-carrier injection in deep submicron N- and P-channel partially and fully depleted unibond and SIMOX MOSFET's

Hot carrier induced degradation is more complex in SOI devices than in bulk devices due to the thin Si-film effects. The reliability of SOI technologies are assessed, focusing on the hot-carrier effects (HCE) in deep submicron SIMOX and Unibond MOSFETs, hot carrier immunity of PD devices and analysis of the degradation N and P channel transistors. An investigation of the aging/recovery mechanisms for P-channel MOSFETs is also made.