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Herein, a low RESET current 1T1R mushroom‐cell phase‐change memory (PCM) device that uses fiber‐textured homostructure GeSbTe (GST) grown on highly oriented TiTe2 seed layer is reported. The homostructure device outperformed the industry standard device, that uses doped polycrystalline GST, on most figures of merit. The homostructure devices are also benchmarked against superlattice (SL) PCM devices with 10 periods of 5/5 nm GST/Sb2Te3 grown on the TiTe2 seed layer, and are found to have same low RESET current. It is also observed by transmission electron microscopy that the alternating layers of GST/Sb2Te3 and TiTe2/Sb2Te3 in SL devices are intermixed in the switched region after the devices are cycled with RESET/SET pulses. Additionally, when the SL device is left in the SET state, the intermixed switched region crystallinity is textured and exhibits van der Waals gaps. The SL PCM devices require a precise layered structure that is hard to yield on a full wafer scale. In contrast, fiber‐textured homostructure PCM cells reported here are easily manufacturable, while providing similarly low RESET current and low‐resistance drift, which makes this device suitable for analog artificial intelligence computation. [ABSTRACT FROM AUTHOR]

Material properties of Ga–Sb binary alloy thin films deposited under ultra-high vacuum conditions were studied for analog phase change memory (PCM) applications. Crystallization of this alloy was shown to occur in the temperature range of 180–264 °C, with activation energy >2.5 eV depending on the composition. X-ray diffraction (XRD) studies showed phase separation upon crystallization into two phases, Ga-doped A7 antimony and cubic zinc-blende GaSb. Synchrotron in situ XRD analysis revealed that crystallization into the A7 phase is accompanied by Ga out-diffusion from the grains. X-ray absorption fine structure studies of the local structure of these alloys demonstrated a bond length decrease with a stable coordination number of 4 upon amorphous-to-crystalline phase transformation. Mushroom cell structures built with Ga–Sb alloys on ø110 nm TiN heater show a phase change material resistance switching behavior with resistance ratio >100 under electrical pulse measurements. TEM and Energy Dispersive Spectroscopy (EDS) studies of the Ga–Sb cells after ∼100 switching cycles revealed that partial SET or intermediate resistance states are attained by the variation of the grain size of the material as well as the Ga content in the A7 phase. A mechanism for a reversible composition control is proposed for analog cell performance. These results indicate that Te-free Ga–Sb binary alloys are potential candidates for analog PCM applications. [ABSTRACT FROM AUTHOR]

Posterior predictive distributions of HT ht estimated by the model were a close match to the observed number of events (Appendix S2), indicating that the model was an adequate fit to the data. For Judas pigs on Santa Cruz island, the corresponding estimates of HT ht ranged from 0.53 to 0.74 (Table 2). The resulting distribution for HT ht was then combined with draws from the prior distribution to estimate HT ht . [Extracted from the article]

This work describes an ab initio study of the electronic structure, electron transport, and energetic properties of cobalt disilicide (CoSi2) and nickel disilicide (NiSi2) nanowires with widths ranging from approximately 0.5 to 2.5 nm using density functional theory. The effects of oxidation on the nanowire surface are considered and are found to reduce the ballistic conductance by approximately 27% for both species considered. The cohesive energies for both the bulk species as well as the nanowires are found to be significantly stronger than for copper, indicating excellent structural stability. While the lower limit of electrical resistance calculated via the ballistic conductance is still significantly larger than that of Cu nanowires of comparable dimensions, the strong intrinsic lattice energy of the disilicide nanowires suggests that they can be fabricated without the need for diffusion barriers and will exhibit superior resistance to self-diffusion and electromigration. [ABSTRACT FROM AUTHOR]

We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultrashallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces. [ABSTRACT FROM AUTHOR]

Seascapes are large, multiple‐use marine areas, defined scientifically and strategically, in which government authorities, private organizations, and other stakeholders cooperate to conserve the diversity and abundance of marine life and promote human well‐being. This approach has been applied by global nonprofit partnerships in five seascapes across eight countries and has drawn on the practical experience of more than 250 partners over 15 years. These experiences have helped define the Seascape approach, consisting of nine essential elements, for achieving effective ocean governance and management from local to regional levels. Lessons learned relate to using integrated planning frameworks, community‐led and locally owned initiatives, and a network of partners and a "backbone" organization for effective Seascape planning and design; promoting diversification in funding sources, private sector engagement, and the transition of nonprofit roles to ensure durability of a Seascape; and ensuring Seascape outcomes are measured through robust monitoring and evaluation frameworks and communicated effectively. Seascapes are unique in their ability to create a pathway toward sustainable development. To ensure support and amplification of the approach, they must align with diversified funding opportunities and global priorities outlined in international United Nations conventions focused on sustainable development and ocean health. [ABSTRACT FROM AUTHOR]

Crystalline phase identification for hafnium-based ferroelectrics by diffraction techniques has been elusive. We use density-functional-theory (DFT)-assisted extended X-ray absorption fine-structure spectroscopy (EXAFS) to determine the crystal symmetry of thin hafnium zirconium oxide (Hf0.46Zr0.54O2) films grown by atomic layer deposition. Ferroelectric switching in TiN/Hf0.46Zr0.54O2/TiN metal–insulator–metal capacitors is verified. Grazing-incidence fluorescence-yield mode Hf L3 and Zr K absorption edge EXAFS data are compared with reference data calculated from DFT-based atomic coordinates for various structural phases of Hf0.5Zr0.5O2. Via EXAFS multiphase fitting, we confirm that the frequently invoked polar orthorhombic Pca21 phase is present in ferroelectric hafnium zirconium oxide, along with an equal amount of the nonpolar monoclinic P21/c phase. For comparison, we verify that paraelectric HfO2 films exhibit the P21/c phase. [ABSTRACT FROM AUTHOR]

A multi-technique approach was used to determine the crystalline phase, texture, and electronic structure of Hf1-xZrxO2 (x = 0-1) high-k gate dielectric thin films grown by atomic layer deposition using a cyclical deposition and annealing method. X-ray diffraction (XRD) analysis performed in both grazing incidence and pole figure configurations identified the tetragonal phase for Zr/(Zr + Hf)% = 58% and a concomitant increase in tetragonal phase for further increase in Zr content. X-ray absorption spectroscopy (XAS) was used to determine the local atomic structure and metal oxide bond orientation. Polarization dependent XAS in normal and grazing incidence showed preferential metal-oxygen bond orientation consistent with the texturing observed by XRD. X-ray photoemission spectroscopy (XPS) and spectroscopic ellipsometry (SE) were also performed with special focus on spectral features which arise as a consequence of atomic ordering and specific crystalline phase. The combination of XAS, XPS, SE, and XRD enabled the determination of the effects of the deposition scheme and compositional alloying on the electronic structure, crystal field effects, optical properties, crystal phase, and texture for the mixed oxide alloy series. The multi-technique approach revealed the martensitic-like transformation of crystalline phase from monoclinic to tetragonal as the majority metal oxide concentration in the alloy mixture changed from HfO2 to ZrO2. [ABSTRACT FROM AUTHOR]

We report on the growth and doping of InAs by atomic layer epitaxy (ALE). The InAs layers were grown using ALE cycles in a metal organic chemical vapor deposition reactor, and Si doping of the films was studied for different SiH4 flow sequences. When SiH4 was added to trimethylindium during the group-III step, the silicon concentration in the film was above 5 × 1019 cm−3. When SiH4 was added to tertiarybutylarsine during the group-V step, much lower incorporation of Si was observed. Conformal Si doped InAs layers were selectively grown by ALE on In0.47Ga0.53As patterned layers made on silicon substrates, demonstrating the suitability of the growth method for III-V device technology on silicon. [ABSTRACT FROM AUTHOR]

Throughout his career, Dr. Stephen Rossnagel and his co-workers have had a profound influence on thin film deposition. His seminal work includes the development of reactive, collimated, and ionized methods of DC and RF magnetron sputtering, as well as plasma-enhanced atomic layer deposition. Most importantly, his contributions have been widely adopted within the microelectronics community in its efforts to produce finer layers with increased uniformity and functionality. While applications span a very broad range, from complementary metal oxide semiconductor device metallization to DNA sensing, Dr. Rossnagel has also conducted fundamental investigations into microstructural effects on electronic scattering. In this manuscript, the authors will highlight some of Steve's contributions to these areas and their continued relevance to current and future microelectronic device scaling. [ABSTRACT FROM AUTHOR]

Epitaxial ultrathin films are of utmost importance for state-of-the-art nanoelectronic devices, such as MOSFET transistors and non-volatile memories. At the same time, as the film thickness is reduced to a few nanometers, characterization of the materials is becoming challenging for commonly used methods. In this report, we demonstrate an approach for in-situ characterization of phase transitions of ultrathin nickel silicides using 3D medium-energy ion scattering. The technique provides simultaneously depth-resolved composition and real-space crystallography of the silicide films using a single sample and with a non-invasive probe. We show, for 10 nm Ni films on Si, that their composition follows a normal transition sequence, such as Ni-Ni2Si-NiSi. However, the transition process is significantly different for samples with initial Ni thickness of 3 nm. Depth-resolved crystallography shows that the Ni films transform from an as-deposited disordered layer to an epitaxial silicide layer at the temperature of ~290 °C, significantly lower than previously reported. The high depth resolution of the technique permits us to determine the composition of the ultrathin films to be 38% Ni and 62% Si. [ABSTRACT FROM AUTHOR]

Lattice spacing measurements of the (211)/(202), (020)/(013), and (111)/(102) reflections were used to calculate the residual stresses in a Ni monosilicide film after cooling from its formation temperature. The ability to measure stresses in crystalline materials using x-ray diffraction requires the use of appropriate x-ray elastic constants, which link the measured strain to the stress tensor of the grains that satisfy the diffraction condition. X-ray elastic constants were calculated in the Neerfeld–Hill (NH) limit for a polycrystalline aggregate composed of orthorhombic crystals. The anisotropy in grains that possess orthorhombic elasticity introduces significant variation in the stresses determined among the three sets of reflections. However, the in-plane stress calculated due to thermal expansion mismatch between NiSi and the underlying Si substrate shows a close correspondence to the average of x-ray measurements. [ABSTRACT FROM AUTHOR]

The texture of CoSi2 films on Si(001) substrates has been examined using synchrotron based high-resolution pole figure analysis. We find that axiotaxy, a recently recognized type of texture which was observed in NiSi thin films on Si(001), is also occurring in CoSi2 layers. Typical of axiotaxy texturing, the CoSi2 pole figures show symmetrical patterns of lines. Calculations show that these features on the pole figures are created by three off-normal fiberlike texture components. These off-normal fiber orientations are a consequence of the alignment of CoSi2<110> planes with Si<110> planes because of very similar d spacings, which causes a periodic arrangement along Si<100> directions in the plane of the interface. This one-dimensional periodicity may provide a lower interfacial energy; however, the periodic arrangement along the Si<100> directions may also be indicative of growth anisotropy. The influence of Ti alloying has been investigated by using in situ x-ray diffraction measurements, as well as pole figure analysis. These results show that the nucleation of both the CoSi and CoSi2 phases is delayed to higher temperatures for the 5 at. % Ti alloyed films. The texture of the CoSi2 phase is also influenced by the addition of Ti. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Resistance capacitance time delay in Cu interconnects is becoming a significant factor requiring further performance improvements in future nanoelectronic devices. Choice of alternate interconnect materials, for example, refractory metals, and subsequent integration with underlying barrier and liner layers are extremely challenging for the sub-10 nm nodes. The development of conformal deposition processes for alternate interconnects, liner, and barrier materials are crucial in order for implementation of a possible replacement for Cu interconnects for narrow line widths. In this study, the authors report on ultrathin (~3 nm) chemical vapor deposition (CVD) grown ruthenium films on 0.5 and 1 nm thick metal nitride (TiN, TaN) barrier layers deposited via atomic layer deposition (ALD). Using scanning electron microscopy, the authors determined the effect of the underlying barrier layer on the coverage of the ruthenium overlayer. The authors utilized synchrotron x-ray diffraction with in situ rapid thermal annealing to investigate the thermal stability of the barrier layers and determine the effective activation energies of barrier failure leading to ruthenium monosilicide formation. For Ru films deposited directly on Si and on 0.5 nm MN (M=Ti, Ta) covered Si substrates, silicide formation proceeds via a two-step crystallization process involving lateral nucleation above ~440 °C followed by thickening of the ruthenium monosilicide layer above ~520 °C. This silicidation temperature of ~440 °C could be potentially problematic in back-end-of-the-line (BEOL) processing since it is close to the typical thermal budget used. However ~1nm thick ALD MN (M=Ti, Ta) was found to be adequate to block silicide formation up to ~580 and ~620 °C for TiN and TaN, respectively, and also aided in superior coverage of the CVD ruthenium overlayer (>90%). The results reported here might be useful to ascertain annealing temperature and time for BEOL process and integration optimization without reaching a state where ruthenium silicides start forming. [ABSTRACT FROM AUTHOR]

The authors have studied the reaction between a Ge (100) substrate and thin layers of Ni ranging from 2 to 10 nm in thickness. The formation of metal-rich Ni5Ge3 was found to precede that of the monogermanide NiGe by means of real-time in situ x-ray diffraction during ramp-annealing and ex situ x-ray pole figure analyses for phase identification. The observed sequential growth of Ni5Ge3 and NiGe with such thin Ni layers is different from the previously reported simultaneous growth with thicker Ni layers. The phase transformation from Ni5Ge3 to NiGe was found to be nucleation-controlled for Ni thicknesses <5 nm, which is well supported by thermodynamic considerations. Specifically, the temperature for the NiGe formation increased with decreasing Ni (rather Ni5Ge3) thickness below 5 nm. In combination with sheet resistance measurement and microscopic surface inspection of samples annealed with a standard rapid thermal processing, the temperature range for achieving morphologically stable NiGe layers was identified for this standard annealing process. As expected, it was found to be strongly dependent on the initial Ni thickness. [ABSTRACT FROM AUTHOR]

The optical constants of 22nm thick Ni1-x Ptx Si (01-x Ptx films sputtered on clean Si were annealed at 500°C for 30 s to form nickel platinum monosilicides. The correct silicide thickness was found by minimizing Si substrate artifacts in the optical constants of Ni1-x Ptx Si determined from ellipsometric data analysis. Two interband transitions at 1.8 and 4.5 eV were observed (rather than three peaks in PtSi). The absorption peak at 4.5 eV broadens with increasing Pt content in the monosilicide. [ABSTRACT FROM AUTHOR]

Using spectroscopic ellipsometry and Drude-Lorentz oscillator fitting, we determinedthe dielectric function and optical conductivity versus photon energy from 0.76 to6.6 eV of 10 nm thick Ni1 ? xPtx alloy (0

The phase formation sequence during the thermally induced solid-state reaction of a 10-nm-thick magnetron-sputtered Ni film with a Si(001) substrate amorphized by ion implantation (a-Si) is investigated using a combination of in situ temperature-resolved x-ray diffraction and ex situ x-ray pole figure analyses, transmission electron microscopy, and Rutherford backscattering spectrometry. Our results reveal (1) that the metastable θ-phase grows from δ-Ni2Si and directly transforms into NiSi and (2) that cleaving the as-prepared, amorphized samples are often subject to a spontaneous reaction possibly resulting from cleaving. In the spontaneously reacted samples, a mixture of θ and NiSi is observed from the beginning of the thermal treatment. The θ phase exhibits a (110) fiber texture with a ±10° misorientation, which is then inherited by NiSi. The rest of the phase sequence is the same as for nonreacted samples, the NiSi2 growing from 390 °C if the amorphized Si is not completely consumed. [ABSTRACT FROM AUTHOR]

Full three dimensional x-ray diffraction reciprocal space maps combined with transmission electron microscopy measurements provide a systematic determination of the texture of GaP epilayers containing embedded MnP nanoclusters grown on GaP(001) by organometallic vapor phase epitaxy. This approach reveals that the texture of the MnP clusters depends on the growth surface morphology and bonding configuration and on the lattice mismatch at the cluster/matrix interfaces during growth. It demonstrates that the orthorhombic MnP nanoclusters are oriented along specific GaP crystallographic directions, forming six well defined families, whose population is influenced by the growth temperature and the film thickness. The clusters principally grow on GaP(001) and GaP{111} facets with a small fraction of clusters nucleating on higher-index GaP{hhl} facets. Most epitaxial alignments share a similar component: the MnP(001) plane (c-axis plane) is parallel to the GaP{110} plane family. Axiotaxial ordering between the MnP clusters and the GaP matrix is also observed. Furthermore, with this systematic approach, all phases present in these heterogeneous films can be identified. In particular, traces of hexagonal Mn2P precipitates have been observed while their formation can be avoided by lowering the growth temperature. Comparing the structural results presented here with magnetic measurement carried out on similar samples confirms that the effective magnetic properties of the heterogeneous layer can be tuned by controlling the texture of the ferromagnetic nanoclusters. [ABSTRACT FROM AUTHOR]

Invasive alien mammals are the major driver of biodiversity loss and ecosystem degradation on islands. Over the past three decades, invasive mammal eradication from islands has become one of society's most powerful tools for preventing extinction of insular endemics and restoring insular ecosystems. As practitioners tackle larger islands for restoration, three factors will heavily influence success and outcomes: the degree of local support, the ability to mitigate for non-target impacts, and the ability to eradicate non-native species more cost-effectively. Investments in removing invasive species, however, must be weighed against the risk of reintroduction. One way to reduce reintroduction risks is to eradicate the target invasive species from an entire archipelago, and thus eliminate readily available sources. We illustrate the costs and benefits of this approach with the efforts to remove invasive goats from the Galápagos Islands. Project Isabela, the world's largest island restoration effort to date, removed >140,000 goats from >500,000 ha for a cost of US$10.5 million. Leveraging the capacity built during Project Isabela, and given that goat reintroductions have been common over the past decade, we implemented an archipelago-wide goat eradication strategy. Feral goats remain on three islands in the archipelago, and removal efforts are underway. Efforts on the Galápagos Islands demonstrate that for some species, island size is no longer the limiting factor with respect to eradication. Rather, bureaucratic processes, financing, political will, and stakeholder approval appear to be the new challenges. Eradication efforts have delivered a suite of biodiversity benefits that are in the process of revealing themselves. The costs of rectifying intentional reintroductions are high in terms of financial and human resources. Reducing the archipelago-wide goat density to low levels is a technical approach to reducing reintroduction risk in the short-term, and is being complemented with a longer-term social approach focused on education and governance. [ABSTRACT FROM AUTHOR]

Invasive mammals are premier drivers of extinction and ecosystem change, particularly on islands. In the 1960s, conservation practitioners started developing techniques to eradicate invasive mammal populations from islands. Larger and more biologically complex islands are being targeted for restoration worldwide. We conducted a feral goat (Capra hircus) eradication campaign on Santiago Island in the Galápagos archipelago, which was an unprecedented advance in the ability to reverse biodiversity impacts by invasive species. We removed .79,000 goats from Santiago Island (58,465 ha) in <4.5 years, at an approximate cost of US$6.1 million. An eradication ethic combined with a suite of techniques and technologies made eradication possible. A field-based Geographic Information System facilitated an adaptive management strategy, including adjustment and integration of hunting methods. Specialized ground hunting techniques with dogs removed most of the goat population. Aerial hunting by helicopter and Judas goat techniques were also critical. Mata Hari goats, sterilized female Judas goats induced into a long-term estrus, removed males from the remnant feral population at an elevated rate, which likely decreased the length and cost of the eradication campaign. The last 1,000 goats cost US$2.0 million to remove; we spent an additional US$467,064 on monitoring to confirm eradication. Aerial hunting is cost-effective even in countries where labor is inexpensive. Local sociopolitical environments and best practices emerging from large-scale, fast-paced eradications should drive future strategies. For nonnative ungulate eradications, island size is arguably no longer the limiting factor. Future challenges will involve removing invasive mammals from large inhabited islands while increasing cost-effectiveness of removing low-density populations and confirming eradication. Those challenges will require leveraging technology and applying theory from other disciplines, along... [ABSTRACT FROM AUTHOR]

Introduced herbivores are major drivers of ecosystem change and biodiversity loss, particularly on islands. Tools and techniques now exist to routinely remove introduced herbivores from islands, providing a powerful conservation tool. Here, we summarize the few documented feral donkey removals on islands worldwide, and report on the removal of populations from the Galápagos archipelago, Ecuador. After decades of sporadic control programs on Santiago Island and Alcedo Volcano, Isabela Island, donkey populations were removed from both areas, concurrent with a goat eradication program. Both ground and aerial hunting programs were utilized. The latter method was highly efficient; donkeys were removed from Santiago Island with less than 80 h of aerial hunting. Given the clear impacts of introduced herbivores on islands worldwide, feral donkey populations should be routinely removed from islands. [ABSTRACT FROM AUTHOR]

A correction to the article "Stress Determination in Nickel Monosilicide Films Using X-ray Diffraction," by Conal E. Murray and colleagues, published in the 2009 issue of the "Journal of Applied Physics."

Using temperature controlled Si and C ion implantation, we studied the effects of pre-amorphization implantation on NiPt alloy silicide phase formation. In situ synchrotron x-ray diffraction and resistance measurements were used to monitor phase and morphology evolution in silicide films. Results show that substrate amorphization strongly modulate the nucleation of silicide phases, regardless of implant species. However, morphological stability of the thin films is mainly enhanced by C addition, independently of the amorphization depth. [ABSTRACT FROM AUTHOR]

This letter reports on a process scheme to obtain highly reproducible Ni1-xPtx silicide films of 3-6 nm thickness formed on a Si(100) substrate. Such ultrathin silicide films are readily attained by sputter deposition of metal films, metal stripping in wet chemicals, and final silicidation by rapid thermal processing. This process sequence warrants an invariant amount of metal intermixed with Si in the substrate surface region independent of the initial metal thickness, thereby leading to a self-limiting formation of ultrathin silicide films. The crystallographic structure, thickness, uniformity, and morphological stability of the final silicide films depend sensitively on the initial Pt fraction. [ABSTRACT FROM AUTHOR]

Schottky source/drain (S/D) MOSFETs hold the promise for low series resistance and extremely abrupt junctions, providing a path for device scaling in conjunction with a low Schottky barrier height (SBH). A S/D junction SBH approaching zero is also needed to achieve a competitive current drive. In this letter, we demonstrate a CMOS process flow that accomplishes reduction of the S/D SBH for nFET and pFET simultaneously using implants into a common NiPt silicide, followed by a low-temperature anneal (500 °C-600 °C). These devices have high-κ/metal gate and fully depleted extremely thin SOI with sub-30-nm gate length. [ABSTRACT FROM AUTHOR]

This letter studies the morphological stability and specific resistivity of sub-10 nm silicide films of Ni, Ni0.95Pt0.05, and Ni0.9Pt0.1 formed on Si(100) substrate. When the deposited metal films are below 1 to 4 nm in thickness depending on the Pt content, the resultant silicide films tend to become epitaxially aligned to the Si substrate and hence exhibit an extraordinary morphological stability up to 800 °C. The presence of Pt in the silicides increases the film resistivity through alloy scattering, but alleviates, owing to a reduced electron mean free path, the frequently encountered sharp increase in resistivity in the sub-10 nm regime. [ABSTRACT FROM AUTHOR]

The authors present a method for the fast and efficient measurement of volumes of reciprocal space by x-ray diffraction using linear and area detectors. The goal of this technique is to obtain a complete overview of the reciprocal space to detect and characterize the nature and orientation of all the phases present. They first explain the detailed procedures and scan strategies required for transforming raw scattering data into three-dimensional maps of reciprocal space and present a complete open-source software package for advanced data processing, analysis, and visualization. Several case studies, chosen to highlight the overall capabilities of the technique, are then introduced. First, thermal diffuse scattering from a monocrystalline Si substrate is characterized by the presence of lines linking diffraction peaks in reciprocal space. Second, a detailed investigation of texture in multiphase thin layers permits us to reveal the unambiguous presence of fiber, axiotaxial, and epitaxial components in oriented films. The visualization of a significant fraction of reciprocal space has allowed us to identify an unexpected metastable phase, which could not be deduced from measurements carried out in the Bragg-Brentano geometry. The technique is then used to study planar defects in nickel silicides formed by solid-state reactions and micro twins in a GaP matrix containing coherent MnP precipitates. Overall, the authors show that the systematic acquisition of significant volumes of reciprocal space permits us to observe behaviors that might otherwise remain undetected when analyses are restricted to typical measurement scans. [ABSTRACT FROM AUTHOR]

Reduction of specific contact resistivity is one of the key items for downscaling of device feature size. This paper discusses an accurate method of measuring specific contact resistivity by using our simple four-point probe test structure having a small area, the interface resistance of which is to be measured, fabricated on a substrate that has low sheet resistance. We also show its application for direct specific contact resistivity measurements of several systems that have dopant dependence, i.e., the NiPtSi/Si, NiPtSi/SiGe, and Pt silicide systems, as well as the metal-metal system between silicide and contact plug metal. [ABSTRACT FROM AUTHOR]