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Stress determination in nickel monosilicide films using x-ray diffraction.

Authors :
Murray, Conal E.
Zhang, Zhen
Lavoie, Christian
Source :
Journal of Applied Physics; Oct2009, Vol. 106 Issue 7, p073521-073533, 12p, 2 Diagrams, 6 Charts, 4 Graphs
Publication Year :
2009

Abstract

Lattice spacing measurements of the (211)/(202), (020)/(013), and (111)/(102) reflections were used to calculate the residual stresses in a Ni monosilicide film after cooling from its formation temperature. The ability to measure stresses in crystalline materials using x-ray diffraction requires the use of appropriate x-ray elastic constants, which link the measured strain to the stress tensor of the grains that satisfy the diffraction condition. X-ray elastic constants were calculated in the Neerfeld–Hill (NH) limit for a polycrystalline aggregate composed of orthorhombic crystals. The anisotropy in grains that possess orthorhombic elasticity introduces significant variation in the stresses determined among the three sets of reflections. However, the in-plane stress calculated due to thermal expansion mismatch between NiSi and the underlying Si substrate shows a close correspondence to the average of x-ray measurements. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
106
Issue :
7
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
44642367
Full Text :
https://doi.org/10.1063/1.3236626