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Presents information on a study which examined the evolution of both {311} defects and dislocation loops in the end-of-range (EOR) damage region in silicon amorphized by ion implantation. Two evolutionary pathways for {311} defects; Preferential site for dislocation loop nucleation.

Studies the perturbance in silicon vacancy concentration induced by the presence of TiSi2 films. Use of antimony in silicon doping as vacancy detector; Stress compensation mechanism; Volume contraction mechanism.

The Air Force Research Laboratory has implemented and evaluated two brain-computer interfaces (BCI's) that translate the steady-state visual evoked response into a control signal for operating a physical device or computer program. In one approach, operators self-regulate the brain response; the other approach uses multiple evoked responses [ABSTRACT FROM PUBLISHER]

The article focuses on some social aspects of religion in relation to psychiatry. This enquiry was largely intended to investigate some of the relationships, which may exist between psychiatric illness and religious denomination, but as will be seen, the opportunity was taken to widen the area of interest. Additional interest lay in making an attempt to survey local religious practice and enthusiasm, the influence of family religious allegiance, and the frequency of occult experiences. Religious affiliation may itself affect referral and one may also wonder whether seine minority groups while possibly attracting eccentric adherents provide such psychological advantages — for example that of facilitating the expression of aggression, — that they retain sufficiently adequate adjustment to avoid clinical contact. The significance of the high frequency of conventional fervour among non-attenders is interesting. Possibly the dilemma can be resolved if Christian behavioral ideals are regarded as being progressively absorbed into a broadly Humanist system which at the same time rejects worship of the supernatural.

Attempts to gauge the level of boron clustering by subjecting boron-doped well structures formed in Czochralski silicon to a self-implant and various anneals to form a population of type {311} defects. Use of quantitative transmission electron microscopy; Residual interstitials trapped in the {311} defects as a function of boron concentration and anneal temperature.

Studies the interactions between end-of-range dislocation loops and {311} defects as a function of their proximity. Variation of the depth of the loop layer from the surface; Annealing of the wafers; Decrease in the number of interstitial {311} defects as the projected range damage was brought closer to the loop layer; Increase in the number of rectangular elongated defects.

Examines the doping superlattices to study transient-enhanced diffusion of boron in regrown silicon. Discussion on the implantation of the wafer; Annealation of samples at 800 degrees Centigrade in an arsenic ambience; Production of implants with a depth for a middle B peak or deepest B peak.

Examines the influence of titanium silicide formation on native silicon point defects. Use of doping superlattices to trace point defect behavior; Enhancement in antimony diffusion; Retardation of boron diffusion over control samples; Mechanisms of vacancy supersaturation and interstitial depletion.

Examines the low energy and low dose B[sup +]-implanted silicon. Use of transmission electron microscopy and secondary ion mass spectroscopy; Integration of B with silicon self-interstitialis from {311} defect dissolution; Effect of extrinsic defects on energy configuration for accommodating excess interstitialis.

Measures the kinetics of solid phase epitaxial regrowth (SPER) during annealing of strained silicon[sub 0.88]germanium[sub 0.12] alloys. Use of time-resolved reflectivity technique; Amorphization of the epilayer by silicon implantation; Dependence of SPER velocity on interface position.

Investigates the lattice strain and defect formation in oxygen-implanted silicon by high-resolution x-ray diffraction. Formation of vacancy-typed defects with high density; Reduction of the negative strain; Production of low-threading dislocation density; Relaxation of the stringent condition.

Examines highly stable silicon dioxide films deposited by rapid thermal low-pressure chemical vapor deposition onto indium phosphide. Result of heating the layer structures; Occurrence of a limited interfacial reaction; Effect of higher initial deposition temperature.

Examines the high-quality GaAs/AlGaAs quantum well and modulation-doped heterostructures. Advantage of trimethylmine alane over conventional organometallic precursors; Observation on photoluminescence from quantum well samples; Fabrication of selectively doped heterostructure transistors.

Reports on the growth by organometallic vapor phase epitaxy high-purity InP on Si substrates using a GaAs intermediate layer. Residual electron concentration exhibited by the InP layers; Electrical properties.